DSK9J01Q0L Panasonic

Doc No. TT4-EA-12742 Revision. 2 Product Standards Junction FETs DSK9J01 0L DSK9J010L Silicon N-channel Junciton FET Unit: mm 1.6 For low frequency amplificaton / For pyroelctric sensor 0.26 0.13 DSK5J01 in SSMini3 type package 3 Features High gate-drain Voltage(Source open)VGDO Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 0.7 Marking Symbol: B6 (0.5)(0.5) 1.0 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Source 2. Drain 3. Gate Panasonic SSMini3-F3-B JEITA SC-89 Absolute Maximum Ratings Ta = 25 C Code SOT-490 Parameter Symbol Rating Unit Gate-drain voltage (Source short) VGDS -55 V Drain current ID 30 mA Internal Connection Gate current IG 10 mA (G) 3 Power dissipation PD 125 mW Channel temperature Tch 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 1 2 (S) (D) Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Gate-drain voltage (Source short) VGDS IG = -100 A, VDS = 0 -55 V *1 IDSS VDS = 10 V , VGS = 0 1.0 6.5 mA Drain current Gate-source cutoff current IGSS VGS = -30 V, VDS = 0 -10 nA Gate-source cutoff voltage VGSC VDS = 10 V, ID = 10 A -5 V Forward transfer admittance Yfs VDS = 10 V, ID = 5 mA, f =1 kHz 2.5 7.5 mS Small-signal short-circuit input capacitance Ciss 6.0 pF VDS = 10 V, VGS = 0, f = 1 MHz Small-signal reverse transfer capacitance Crss 2.5 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Rank classification Code PQ Rank PQ IDSS (mA) 1.0 to 3.0 2.0 to 6.5 Marking symbol B6P B6Q 1of 3 Page Established : 2010-09-07 Revised : 2014-03-25 0.85 1.6Doc No. TT4-EA-12742 Revision. 2 Product Standards Junction FETs DSK9J01 0L Technical Data ( reference ) PD - Ta ID - VGS 150 8 VDS= 10V 125 -40 6 100 25 75 4 50 2 Ta = 85 25 0 0 0 20406080 100 120 140 160 180 200 -1.5 -1 -0.5 0 0.5 Gate-source voltage VGS (V) Temperature Ta () ID - VDS Yfs - ID 4 100 Ta = 25 Ta = 25 VDS = 10 V VGS = 0 V 3 10 2 -0.2 V 1 1 -0.4 V -0.6 V 0 0.1 02 468 10 12 0.01 0.1 1 10 Drain-source voltage VDS (V) Drain current ID (mA) Cx - VDS 12 Ta = 25 10 Coss Ciss 8 6 Crss 4 2 0 0 5 10 15 20 Drain-source voltage VDS (V) 2of 3 Page Established : 2010-09-07 Revised : 2014-03-25 Power Dissipation PD (mW) Drain current ID (mA) Capacitance C (pF) Drain current ID (mA) Forword transfer admittance Yfs (mS)