X-On Electronics has gained recognition as a prominent supplier of DY2L3A3C0L1 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. DY2L3A3C0L1 ESD Suppressors / TVS Diodes are a product manufactured by Panasonic. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

DY2L3A3C0L1 Panasonic

DY2L3A3C0L1 electronic component of Panasonic
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See Product Specifications
Part No.DY2L3A3C0L1
Manufacturer: Panasonic
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes WL CSP Bidirectional ESD Diode
Datasheet: DY2L3A3C0L1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.6121
10 : USD 0.4485
100 : USD 0.1575
500 : USD 0.1467
1000 : USD 0.132
2000 : USD 0.1218
10000 : USD 0.1218
25000 : USD 0.1218
50000 : USD 0.1218
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Operating Supply Voltage
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DY2L3A3C0L1 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DY2L3A3C0L1 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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Doc No. TT4-EA-15064 Revision. 1 Product Standards TVS Diode DY2L3A3C0L1 DY2L3A3C0L1 Silicon epitaxial planar type Unit: mm 0.3 For bidirectional ESD protection and transient voltage suppressor 2 Features IEC 61000-4-2 (ESD) 15kV (air and contact) Low clamping voltage Low capacitance 1 Low leak current 0.215 0.115 Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 2 0.115 1 Marking Symbol: F2 Packaging 0.1 0.215 Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard) 1. Anode 2. Anode Absolute Maximum Ratings Ta = 25 C Panasonic DCSP0603010-N2 Parameter Symbol Rating Unit JEITA *1 PT 100 mW Code Total power dissipation *2 ESD 15 kV Electrostatic discharge *3 Ppp 22 W Peak pulse power *3 Ipp 2.4 A Internal Connection Peak pulse current Junction temperature Tj 150 C 2 Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C Note: *1 Mounted on FR4 board. (25.4 mm x 25.4 mm x 1.0 mm) *2 Test method:IEC61000-4-2 (C = 150 pF, R = 330 W, Contact and Air discharge:10 times) *3 Test method:IEC61000-4-5 (tp = 8/20 ms, Unrepeated) 1 Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Reverse stand-off voltage VRWM 3.3 V *1, *2 VBR IR = 5 mA 5.86 6.30 6.74 V Reverse breakdown voltage Reverse current IR mA VR = 3.3 V 1.0 *3 Vc Ipp = 2.4 A, tp = 8/20 ms 11 V Clamping voltage Terminal capacitance Ct VR = 0 V, f = 1 MHz 7.5 pF Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 8 ms/20 ms Pulse Waveform Front time: 2. Absolute frequency of input and output is 5 MHz. 100 T1 = 1.25 T = 8ms20% 90 Time to half value: 3. *1 The temperature must be controlled 25C for VBR mesurement. T2 = 20ms20% T2 VBR value measured at other temperature must be adjusted to VBR (25C). 50 *2 VBR guaranted 20 ms after current flow. *3 8ms/20ms Pulse Waveform 10 T t T1 1 of 3 Page Established : 2015-10-13 Revised : - - Percent of Ipp 0.6 0.0425 0.4Doc No. TT4-EA-15064 Revision. 1 Product Standards TVS Diode DY2L3A3C0L1 Technical Data (Reference) PT - Ta IR - VBR 150 1.0E-01 Ta = 25 Mounted on FR4 board. Board size : 25.4 mm x 25.4 mm x 1.0 mm 100 1.0E-02 50 1.0E-03 0 1.0E-04 0 20 40 60 80 100 120 140 160 180 200 2 3 4 5 6 7 8 9 10 Ambient temperature Ta ( ) Reverse breakdown voltage VBR (V) IR - VR Ct - VR 14 1.0E-08 12 Ta = 25 Ta = 25 f = 1 MHz 1.0E-09 10 8 1.0E-10 6 4 1.0E-11 2 1.0E-12 0 0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5 Reverse voltage VR (V) Reverse voltage VR (V) Page 2 of 3 Established : 2015-10-13 Revised : - - Reverse current IR (A) Total power dissipation PT (mW) Reverse current IR (A) Terminal capacitance Ct (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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