Product Information

LNJ837W83RA

LNJ837W83RA electronic component of Panasonic

Datasheet
Panasonic Standard LEDs - SMD LED ORG HI-BRT ESS

Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 5000
Multiples : 5000

Stock Image

LNJ837W83RA
Panasonic

5000 : USD 0.0901
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

LNJ837W83RA
Panasonic

1 : USD 0.3024
10 : USD 0.1928
N/A

Obsolete
0 - WHS 3


Multiples : 1

Stock Image

LNJ837W83RA
Panasonic

N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

LNJ837W83RA
Panasonic

1 : USD 1.2384
10 : USD 0.8942
100 : USD 0.1828
500 : USD 0.1162
1000 : USD 0.097
5000 : USD 0.079
10000 : USD 0.0666
25000 : USD 0.0621
50000 : USD 0.0609
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
LED Size
Illumination Color
Wavelength/Color Temperature
Luminous Intensity
Viewing Angle
Series
Packaging
Product
Vf - Forward Voltage
Power Rating
Width
Height
Minimum Operating Temperature
Maximum Operating Temperature
Lens Shape
Lens Dimensions
Brand
Mounting Style
If - Forward Current
Factory Pack Quantity :
Peak Wavelength
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif

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LNJ837W83RA Hight Bright Surface Mounting Chip LED ESS II Type Absolute Maximum Ratings T = 25C a Lighting Color Parameter Symbol Rating Unit Orange Power dissipation P 55 mW D Forward current I 20 mA F * Pulse forward current I 60 mA FP Reverse voltage V 4 V R Operating ambient temperature T 30 to +85 C opr Storage temperature T 40 to +100 C stg Note) : The condition of I is duty 10%, Pulse width 1 msec. * FP Electro-Optical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit 1 * Luminous intensity I I = 5 mA 11.5 17.5 47.3 mcd O F Reverse current I V = 4 V 100 A R R Forward voltage V I = 5 mA 1.95 2.30 V F F Peak emission wavelength I = 5 mA 630 nm P F 2 * Dominant emission wavelength I = 5 mA 615 620 627 nm d F Spectral half band width I = 5 mA 13 nm F Note) 1: Measurement tolerance: 20% * 2: Measurement tolerance: 2 nm * I I I V Relative luminous intensity T O F F F a 3 2 2 10 10 10 10 2 10 10 1 1 10 1 10 2 11010 1.5 1.7 1.9 2.1 2.3 2.5 30 0 30 60 90 Forward current I (mA) Forward voltage V (V) Ambient temperature T (C) F F a I T Relative luminous intensity F a P 40 100 Y Directive characteristics 30 80 X 0 10 10 20 20 30 30 X 60 Y 40 80 40 20 50 50 60 40 60 60 40 10 70 70 20 20 80 80 90 90 0 0 550 600 650 700 100 80 60 40 20 0 20 40 60 80 100 30 0306090 Peak emission wavelength (nm) Relative luminous intensity (%) Ambient temperature T (C) P a Publication date: November 2016 Ver. CEK 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Relative luminous intensity (%) Luminous intensity I (mcd) O Forward current I (mA) F Forward current I (mA) Relative luminous intensity (%) FLNJ837W83RA Package (Unit: mm) 1.10 0.10 Anode mark 2 1 Luminescence position (0.19) 0.56 0.10 0.56 0.10 Polarity 1 2 1 2 1.60 0.10 1. Anode 2. Cathode Recommended Land Layout 1.65 0.80 (Note1)Electrode projection is not included in the package dimensions. (Note2)About solder thickness, please examine the products yourself completely. (Recommended thickness : t=0.10 mm 0.15 mm) Ver. CEK 2 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) 0.20 0.05 0.80 0.80 0.10 (0.09 0.035) 0.80 0.10

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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