X-On Electronics has gained recognition as a prominent supplier of PJ2301-PEC MOSFETs across the USA, India, Europe, Australia, and various other global locations. PJ2301-PEC MOSFETs are a product manufactured by Panjit. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PJ2301-PEC Panjit

PJ2301-PEC electronic component of Panjit
PJ2301-PEC Panjit
PJ2301-PEC MOSFETs
PJ2301-PEC  Semiconductors

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See Product Specifications
Part No. PJ2301-PEC
Manufacturer: Panjit
Category: MOSFETs
Description: MOSFET P Trench 20V 3.1A 1.2V @ 250uA 100 mO @ 3.1A,4.5V SOT-23 (SOT-23-3) RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
150: USD 0.0736 ea
Line Total: USD 11.04 
Availability - 0
MOQ: 150  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Fri. 09 May to Wed. 14 May
MOQ : 150
Multiples : 5
150 : USD 0.0736
500 : USD 0.0688
2500 : USD 0.0668
5000 : USD 0.0656
27000 : USD 0.0629

   
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We are delighted to provide the PJ2301-PEC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PJ2301-PEC and other electronic components in the MOSFETs category and beyond.

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The PJ2301-PEC is a surface-mount MOSFET developed by Panjit with a P Trench structure. Designed to provide improved performance at higher power levels, the component features a maximum drain-source voltage of 20V and a continuous drain current of 3.1A at 25°C. The gate-source threshold voltage is just 1.2V and the typical gate charge is at 250uA. The on-state drain-source resistance is 100 milliOhm at a maximum drain current of 3.1A and 4.5V gate-source voltage. This electronic part measures just 3.0mm x 1.5mm x 1.2mm making it suitable for use in space-constrained electronics, such as portable devices. The mid-power MOSFET is packaged in a SOT-23-3 package and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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