PPJA3409 30V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) Voltage -30 V Current -2.9A Features RDS(ON) , VGS -10V, ID -2.9A<110m RDS(ON) , VGS -4.5V, ID -1.9A<150m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A09 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -30 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I -2.9 A D Pulsed Drain Current I -11.6 A DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25 C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 100 JA - Junction to Ambient C/W March 10,2014-REV.00 Page 1 PPJA3409 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =-250uA -30 - - V DSS GS D Gate Threshold Voltage V V =V , I =-250uA -1 -1.31 -2.1 V GS(th) DS GS D V =-10V, I =-2.9A - 92 110 GS D Drain-Source On-State Resistance R m DS(on) V =-4.5V, I =-1.9A - 120 150 GS D Zero Gate Voltage Drain Current I V =-30V, V =0V - -0.01 -1 uA DSS DS GS Gate-Source Leakage Current I V =+20V, V =0V - +10 +100 nA GSS GS DS Dynamic Total Gate Charge Q - 9.8 - g V =-15V, I =-2.9A, DS D Gate-Source Charge Q - 1.5 - nC gs (Note 1,2) V =-10V GS Gate-Drain Charge Q - 2.2 - gd Input Capacitance Ciss - 396 - V =-15V, V =0V, DS GS Output Capacitance Coss - 47 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 36 - Switching Turn-On Delay Time td - 5 - (on) V =-15V, I =-2.9A, DD D Turn-On Rise Time tr 30 V =-10V, ns GS Turn-Off Delay Time td - 25 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 8 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - -1.5 A S Diode Forward Current Diode Forward Voltage V I =-1.0A, V =0V -0.77 -1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper 4. The maximum current rating is package limited March 10,2014-REV.00 Page 2