PPJA3432 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm) Voltage 30 V Current 1.6A Features RDS(ON) , VGS 4,5V, ID 1.6A<200m RDS(ON) , VGS 2.5V, ID 1.1A<270m RDS(ON) , VGS 1.8V, ID 0.2A<570m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A32 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 30 V DS Gate-Source Voltage V +8 V GS Continuous Drain Current I 1.6 A D (Note 4) Pulsed Drain Current I 6.4 A DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25 C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 100 JA - Junction to Ambient C/W January 22,2015-REV.02 Page 1 PPJA3432 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 30 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 0.5 0.78 1.3 V GS(th) DS GS D V =4.5V, I =1.6A - 145 200 GS D Drain-Source On-State Resistance R V =2.5V, I =1.1A - 185 270 m DS(on) GS D V =1.8V, I =0.2A - 330 570 GS D Zero Gate Voltage Drain Current I V =30V, V =0V - 0.01 1 uA DSS DS GS Gate-Source Leakage Current I V =+8V, V =0V - 1.4 +10 uA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 1.5 - g V =15V, I =1.6A, DS D Gate-Source Charge Q - 0.3 - nC gs (Note 1,2) V =4.5V GS Gate-Drain Charge Q - 0.3 - gd Input Capacitance Ciss - 93 - V =15V, V =0V, DS GS Output Capacitance Coss - 19 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 6 - Turn-On Delay Time td - 6.4 - (on) V =15V, I =1.6A, DD D Turn-On Rise Time tr - 33 - V =4.5V, ns GS Turn-Off Delay Time td - 37 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 32 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 1.0 A S Diode Forward Current Diode Forward Voltage V I =1.0A, V =0V - 0.81 1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. January 22,2015-REV.02 Page 2