PPJA3438 50V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit : inch(mm) 50 V 500mA Voltage Current Features RDS(ON) , VGS 10V, ID 500mA<1.45 RDS(ON) , VGS 4.5V, ID 200mA<1.95 RDS(ON) , VGS 2.5V, ID 100mA<4.0 RDS(ON) , VGS 1.8V, ID 10mA<6.0 Advanced Trench Process Technology ESD Protected 2KV HBM Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A38 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 50 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I 500 mA D Pulsed Drain Current I 1200 mA DM o T =25 C 500 mW A Power Dissipation P D o o Derate above 25 C 4 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 250 JA - Junction to Ambient C/W November 5,2015-REV.01 Page 1 PPJA3438 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V,I =250uA 50 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 0.5 0.86 1.0 V GS(th) DS GS D V =10V,I =500mA - 1.2 1.45 GS D V =4.5V,I =200mA - 1.3 1.95 GS D Drain-Source On-State Resistance R DS(on) V =2.5V,I =100mA - 1.7 4.0 GS D V =1.8V,I =10mA - 4.0 6.0 GS D Zero Gate Voltage Drain Current I V =50V,V =0V - - 1 uA DSS DS GS Gate-Source Leakage Current I V =+20V,V =0V - - +10 uA GSS GS DS (Note 4) Dynamic Total Gate Charge Q - 0.95 - g V =25V, I =500mA, DS D Gate-Source Charge Q - 0.34 - nC gs V =4.5V GS Gate-Drain Charge Q - 0.32 - gd Input Capacitance Ciss - 36 - V =25V, V =0V, DS GS Output Capacitance Coss - 11 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 6.6 - Turn-On Delay Time td - 2.3 - (on) V =25V, I =500mA, DD D Turn-On Rise Time tr - 20 - V =10V, ns GS Turn-Off Delay Time td - 7 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 20 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 500 mA S Diode Forward Current Diode Forward Voltage V I =500mA, V =0V - 0.9 1.5 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper 4. Guaranteed by design, not subject to production testing November 5,2015-REV.01 Page 2