X-On Electronics has gained recognition as a prominent supplier of PJA3460_R1_00001 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PJA3460_R1_00001 MOSFETs are a product manufactured by Panjit. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PJA3460_R1_00001 Panjit

PJA3460_R1_00001 electronic component of Panjit
PJA3460_R1_00001 Panjit
PJA3460_R1_00001 MOSFETs
PJA3460_R1_00001  Semiconductors

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See Product Specifications
Part No. PJA3460_R1_00001
Manufacturer: Panjit
Category: MOSFETs
Description: MOSFET /A60/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-60TMN/NF60T-QI04/PJ///
Datasheet: PJA3460_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.297 ea
Line Total: USD 0.3 
Availability - 122546
Ship by Tue. 14 Jan to Thu. 16 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
122546
Ship by Tue. 14 Jan to Thu. 16 Jan
MOQ : 1
Multiples : 1
1 : USD 0.297
10 : USD 0.2035
100 : USD 0.11
1000 : USD 0.1012
3000 : USD 0.0814
9000 : USD 0.0748
24000 : USD 0.0748

5723
Ship by Tue. 14 Jan to Thu. 16 Jan
MOQ : 1
Multiples : 1
1 : USD 0.518
10 : USD 0.3696
100 : USD 0.2114
152 : USD 0.1106
419 : USD 0.105

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PJA3460_R1_00001 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PJA3460_R1_00001 and other electronic components in the MOSFETs category and beyond.

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PPJA3460 60V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) Voltage 60 V Current 2.5 A Features RDS(ON) , VGS 10V, ID 2.0A<75m RDS(ON) , VGS 4.5V, ID 1.0A<90m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A60 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 60 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I 2.5 A D (Note 4) Pulsed Drain Current I 10 A DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25 C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 100 JA - Junction to Ambient C/W August 3,2015-REV.00 Page 1 PPJA3460 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 60 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 1.0 1.75 2.5 V GS(th) DS GS D V =10V, I =2.0A - 55 75 GS D Drain-Source On-State Resistance R m DS(on) V =4.5V, I =1.0A - 63 90 GS D Zero Gate Voltage Drain Current I V =48V, V =0V - - 1 uA DSS DS GS Gate-Source Leakage Current I V =+20V, V =0V - - +100 nA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 9.3 - g V =48V, I =2.0A, DS D Gate-Source Charge Q - 2.2 - nC gs (Note 1,2) V =10V GS Gate-Drain Charge Q - 1.9 - gd Input Capacitance Ciss - 509 - V =15V, V =0V, DS GS Output Capacitance Coss - 47 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 23 - Turn-On Delay Time td - 3.2 - (on) V =30V, I =2.0A, DD D Turn-On Rise Time tr - 9.7 - V =10V, ns GS Turn-Off Delay Time td - 18.5 - (off) (Note 1,2) R =3.3 G Turn-Off Fall Time tf - 6.4 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 2.5 A S Diode Forward Current Diode Forward Voltage V I =1A, V =0V - 0.77 1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. August 3,2015-REV.00 Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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