PPJA3461 60V P-Channel Enhancement Mode MOSFET SOT-23 Unit : inch(mm -60 V -1.9A Voltage Current Features RDS(ON) , VGS -10V, ID -1.9A<190m RDS(ON) , VGS -4.5V, ID -1.5A<240m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A61 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -60 V DS Gate-Source Voltage V +20 V GS o T =25 C A -1.9 Continuous Drain Current I A D o T =70 C A -1.5 (Note 1) Pulsed Drain Current I -7.6 A DM o T =25 C A 1.25 Power Dissipation P W D o T =70 C A 0.8 (Note 5) Single Pulse Avalanche Energy E 32 mJ AS o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 6) o R 100 JA - Junction to Ambient C/W August 3,2015-REV.00 Page 1 PPJA3461 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =-250uA -60 - - V DSS GS D Gate Threshold Voltage V V =V , I =-250uA -1.0 -1.88 -2.5 V GS(th) DS GS D V =-10V, I =-1.9A - 140 190 GS D Drain-Source On-State Resistance R m DS(on) V =-4.5V, I =-1.5A - 190 240 GS D Zero Gate Voltage Drain Current I V =-60V, V =0V - - -1 uA DSS DS GS Gate-Source Leakage Current I V =+20V, V =0V - - +100 nA GSS GS DS (Note 7) Dynamic Total Gate Charge Q - 8.3 - g V =-30V, I =-1.9A, DS D Gate-Source Charge Q - 1.8 - nC gs (Note 1,2) V =-10V GS Gate-Drain Charge Q - 1.6 - gd Input Capacitance Ciss - 430 - V =-30V, V =0V, DS GS Output Capacitance Coss - 33 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 29 - Turn-On Delay Time td - 5.1 - (on) V =-30V, I =-1.0A, DD D Turn-On Rise Time tr - 20 - V =-10V, ns GS Turn-Off Delay Time td - 36 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 11 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - -1.5 A S Diode Forward Current Diode Forward Voltage V I =-1.0A, V =0V - -0.78 -1.0 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. The maximum current rating is package limited. 4. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. 5. The test condition is L=1mH, I =8A, V =25V, V =10V AS DD GS 6. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is 2 defined as the solder mounting surface of the drain pins. Mounted on a 1 inch with 2oz.square pad of copper. 7. Guaranteed by design, not subject to production testing. August 3,2015-REV.00 Page 2