PPJC7400 30V N-Channel Enhancement Mode MOSFET SOT-323 Unit: inch(mm) Voltage 30 V Current 1.9A Features RDS(ON) , VGS 10V, ID 1.9A<70m RDS(ON) , VGS 4.5V, ID 1.6A<75m RDS(ON) , VGS 2.5V, ID 1.2A<85m RDS(ON) , VGS 1.8V, ID 0.7A<110m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-323 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00018 ounces, 0.005 grams Marking: C00 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 30 V DS Gate-Source Voltage V +12 V GS Continuous Drain Current I 1.9 A D Pulsed Drain Current I 7.6 A DM o T =25 C 350 mW a Power Dissipation P D o o Derate above 25 C 2.8 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 357 JA - Junction to Ambient C/W March 10,2014-REV.00 Page 1 PPJC7400 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 30 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 0.4 0.72 1.2 V GS(th) DS GS D V =10V, I =1.9A - 58 70 GS D V =4.5V, I =1.6A - 61 75 GS D Drain-Source On-State Resistance R m DS(on) V =2.5V, I =1.2A - 69 85 GS D V =1.8V, I =0.7A - 80 110 GS D Zero Gate Voltage Drain Current I V =30V, V =0V - 0.01 1 uA DSS DS GS Gate-Source Leakage Current I V =+12V, V =0V - +10 +100 nA GSS GS DS Dynamic Total Gate Charge Q - 4.8 - g V =15V, I =1.9A, DS D Gate-Source Charge Q - 0.5 - nC gs (Note 1,2) V =10V GS Gate-Drain Charge Q - 0.7 - gd Input Capacitance Ciss - 447 - V =15V, V =0V, DS GS Output Capacitance Coss - 34 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 22 - Switching Turn-On Delay Time td - 2 - (on) V =15V, I =1.9A, DD D Turn-On Rise Time tr 38 - V =10V, ns GS Turn-Off Delay Time td 812 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 64 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 0.5 A S Diode Forward Current Diode Forward Voltage V I =1.0A, V =0V 0.77 1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper 4. The maximum current rating is package limited March 10,2014-REV.00 Page 2