PPJE138K 50V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm) Voltage 50 V Current 350mA Features RDS(ON) , VGS 10V, ID 500mA<1.6 RDS(ON) , VGS 4.5V, ID 200mA<2.5 RDS(ON) , VGS 2.5V, ID 100mA<4.5 Advanced Trench Process Technology Specially Designed for Battery Operated Systems, Solid-State Relays Drivers: Relay, Displays, Memories, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: SOT-523 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00007 ounces, 0.002 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 50 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I 350 mA D Pulsed Drain Current I 1200 mA DM o T =25 C 223 mW A Power Dissipation P D o o Derate above 25 C 1.8 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 560 JA - Junction to Ambient C/W September 10,2019-REV.03 Page 1 PPJE138K o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V,I =250uA 50 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 0.8 1.0 1.5 V GS(th) DS GS D V =10V,I =500mA - 0.96 1.6 GS D Drain-Source On-State Resistance R V =4.5V,I =200mA - 1.25 2.5 DS(on) GS D V =2.5V,I =100mA - 2.73 4.5 GS D Zero Gate Voltage Drain Current I V =50V,V =0V - 0.01 1 uA DSS DS GS Gate-Source Leakage Current I V =+20V,V =0V - +3.0 +10 uA GSS GS DS Dynamic Total Gate Charge Q - 0.63 1 g V =25V, I =250mA, DS D Gate-Source Charge Q - 0.2 - nC gs (Note 1,2) V =4.5V GS Gate-Drain Charge Q - 0.23 - gd Input Capacitance Ciss - 25 50 V =25V, V =0V, DS GS Output Capacitance Coss - 9.5 20 pF f=1.0MHZ Reverse Transfer Capacitance Crss - 2.1 5 Switching Turn-On Delay Time td - 2.2 5 (on) V =25V, I =500mA, DD D Turn-On Rise Time tr - 19.2 38 V =10V, ns GS Turn-Off Delay Time td - 6.2 12 (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 23 50 Drain-Source Diode Maximum Continuous Drain-Source I --- - - 500 mA S Diode Forward Current Diode Forward Voltage V I =500mA, V =0V - 0.86 1.5 V SD S GS NOTES: 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper September 10,2019-REV.03 Page 2