PPJE8406 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm) Voltage 20 V Current 800mA Features R , V 4.5V,I 500mA=0.4 DS(ON) GS DS R , V 2.5V,I 300mA=0.7 DS(ON) GS DS R , V 1.8V,I 100mA=1.2 (typ) DS(ON) GS DS Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.(Halogen Free) Mechanical Data Case: SOT-523 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00007 ounces, 0.002 grams Marking: E06 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 20 V DS Gate-Source Voltage V +12 V GS Continuous Drain Current I 800 mA D Pulsed Drain Current I 3000 mA DM o T =25 C 350 mW A Power Dissipation P D o o Derate above 25 C 2.8 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 357 JA - Junction to Ambient C/W May 4,2016-REV.03 Page 1 PPJE8406 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V,I =250uA 20 - - V DSS GS D Gate Threshold Voltage V V =V ,I =250uA 0.4 0.63 1.0 V GS(th) DS GS D V =4.5V,I =500mA - 0.35 0.4 GS D Drain-Source On-State Resistance R V =2.5V,I =300mA - 0.6 0.7 DS(on) GS D V =1.8V,I =100mA - 1.2 - GS D Zero Gate Voltage Drain Current I V =16V,V =0V - 0.02 1 uA DSS DS GS Gate-Source Leakage Current I V =+4.5V,V =0V - +0.05 +1 uA GSS GS DS Gate-Source Leakage Current I V =+10V,V =0V - +2 +10 uA GSS GS DS Dynamic Total Gate Charge Q - 0.92 - g V =10V, I =500mA, DS D Gate-Source Charge Q - 0.31 - nC gs (Note 1,2) V =4.5V GS Gate-Drain Charge Q - 0.08 - gd Input Capacitance Ciss - 50 - V =10V, V =0V, DS GS Output Capacitance Coss - 10 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 8.5 - Switching Turn-On Delay Time td - 4 - (on) V =10V, I =500mA, DD D Turn-On Rise Time tr - 20 - V =4.5V, ns GS Turn-Off Delay Time td - 12 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 25 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 500 mA S Diode Forward Current Diode Forward Voltage V I =500mA, V =0V - 0.91 1.3 V SD S GS NOTES: 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper May 4,2016-REV.03 Page 2