PJMF380N65E1 650V N-Channel Super Junction MOSFET 650 V 380 m Voltage Rdson ITO-220AB-F Current 10.6 A Qg 22 nC Feature: RDS(ON) Max, VGS 10V: 380m Easy to use/ drive High Speed Switching and Low RDS(ON) 100% Avalanche Tested 100% Rg Tested Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: ITO-220AB-F package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.068 ounces, 2 grams Application PFC, TV Power, PC Power, PD Charger, Adapter, UPS o Absolute Maximum Ratings (T = 25 C unless otherwise specified) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage T V 700 jmax DS Drain-Source Voltage V 650 V DS Gate-Source Voltage V 30 GS o TC=25 C 10.6 Continuous Drain Current I A D o T =100 C 6.7 C o Pulsed Drain Current T =25 C 31.8 A C I DM Single Pulse Avalanche Energy 129 mJ EAS MOSFET dv/dt ruggedness dv/dt 50 V/ns o TC=25 C 33 Power Dissipation PD W o TC=100 C 13 Insulation Withstand Voltage for ITO-220AB-F VISO 3.5 kV o Operating Junction and Storage Temperature Range -55~150 C T ,T J STG Thermal Characteristics PARAMETER SYMBOL MAXIMUM UNITS o Junction-to-Case 3.8 C/W R JC Thermal Resistance (Note 3) o Junction-to-Ambient R 62.5 C/W JA September 2,2021 PJMF380N65E1-REV.01 Page 1 PJMF380N65E1 o Electrical Characteristics (TA = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 650 710 - DSS GS D V Gate Threshold Voltage V VDS=VGS, ID=250uA 2 3.4 4 GS(th) (Note 1) Drain-Source On-State Resistance R V =10V, I =3.2A - 331 380 m DS(on) GS D Zero Gate Voltage Drain Current I VDS=650V, VGS=0V - - 1 uA DSS Gate-Source Leakage Current I V =30V, V =0V - - 100 nA GSS GS DS Transfer characteristics gfs VDS=20V, ID=10.6A - 10 - S (Note 5) Dynamic Total Gate Charge Qg - 22 - V =520V, I =10.6A, DS D Gate-Source Charge Q - 5 - nC gs V =10V GS Gate-Drain Charge Qgd - 11 - Input Capacitance Ciss - 769 - VDS=400V, VGS=0V, Output Capacitance Coss - 32 - f=250kHz Reverse Transfer Capacitance Crss - 10 - pF VDS=0V to 520V, Effective Output Capacitance Co(er) VGS=0V, f=250kHz - 41 - Energy Related (Note 4) Turn-On Delay Time td - 37 - (on) VDD=325V, ID=10.6A, Turn-On Rise Time t - 58 - r VGS=10V, RG=25 ns Turn-Off Delay Time td - 121 - (off) (Note 2) Turn-Off Fall Time tf - 49 - Gate Resistance Rg f=1.0MHz - 19 - Drain-Source Diode Maximum Continuous Drain-Source I - - 10.6 A S Diode Forward Current Diode Forward Voltage V IS=10.6A, VGS=0V - - 1.4 V SD Reverse Recovery Charge Q - 3.9 - C rr IS=10.6A di/dt=100A/s Reverse Recovery Time Trr - 295 - ns NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance. 4. C is a capacitance that gives the same stored energy as Coss while V is rising from 0V to 80% V o(er) DS (BR)DSS 5. Guaranteed by design, not subject to production testing September 2,2021 PJMF380N65E1-REV.01 Page 2