Preliminary PPJQ4403P 30V P-Channel Enhancement Mode MOSFET DFN3333-8L -30 V -35 A Voltage Current Features R , V -10V,I -10A<15.5m DS(ON) GS D R , V -4.5V,I -6A<23m DS(ON) GS D High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: DFN3333-8L Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.001 ounces, 0.03 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -30 V DS Gate-Source Voltage V +20 V GS o T =25 C -35 C Continuous Drain Current I D o T =100 C -22 A C (Note 1) o Pulsed Drain Current T =25 C I -140 C DM o T =25 C 30 C Power Dissipation PD W o T =100 C 11 C o T =25 C -9.8 A Continuous Drain Current I A D o T =70 C -7.8 A o Power Dissipation T =25 C 2.0 A PD W o Power Dissipation T =70 C 1.3 A o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Junction to Case R 4.2 J C o (Note 4,5) Typical Thermal Resistance C/W Junction to Ambient R 62.5 J A Limited only By Maximum Junction Temperature March 30,2018-REV.02 Page 1 Preliminary PPJQ4403P o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V,I =-250uA -30 - - DSS GS D V Gate Threshold Voltage V V =V ,I =-250uA -1.0 -1.6 -2.5 GS(th) DS GS D V =-10V,I =-10A - 12 15.5 GS D Drain-Source On-State Resistance R m DS(on) V =-4.5V,I =-6A - 18 23 GS D Zero Gate Voltage Drain Current I V =-30V,V =0V - - -1.0 uA DSS DS GS Gate-Source Leakage Current I V =+20V,V =0V - - +100 nA GSS GS DS (Note 6) Dynamic Total Gate Charge Q - 15 - g V =-15V, I =-8A, DS D Gate-Source Charge Q - 4 - nC gs (Note 1,2) V =-4.5V GS Gate-Drain Charge Q - 6 - gd Input Capacitance Ciss - 1730 - V =-15V, V =0V, DS GS Output Capacitance Coss - 180 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 125 - Turn-On Delay Time td - 9 - (on) V =-15V, I =-1A, DD D Turn-On Rise Time t - 22 - r V =-10V, R =6 ns GS G Turn-Off Delay Time td - 60 - (off) (Note 1,2) Turn-Off Fall Time t - 14 - f Drain-Source Diode Maximum Continuous Drain-Source I --- - - -35 A S Diode Forward Current Diode Forward Voltage V I =-1A,V =0V - -0.7 -1 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics 3. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and J(MAX) duty cycles to keep initial T =25C. J 4. The maximum current rating is package limited 5. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is 2 defined as the solder mounting surface of the drain pins. Mounted on a 1 inch with 2oz.square pad of copper 6. Guaranteed by design, not subject to production testing. March 30,2018-REV.02 Page 2