PPJQ5458A-AU 60V N-Channel Enhancement Mode MOSFET DFN5060-8L 60 V 16 A Voltage Current Features R , V 10V, I 8A<50m DS(ON) GS D R , V 4.5V, I 4A<60m DS(ON) GS D High switching speed Improved dv/dt capability Low reverse transfer capacitance AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case : DFN5060-8L Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0028 ounces, 0.08 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 60 DS V Gate-Source Voltage V +20 GS o T =25 C 16 C (Note 4) Continuous Drain Current I D o T =100 C 10 A C (Note 1) o Pulsed Drain Current T =25 C I 64 C DM o T =25 C 32.6 C Power Dissipation PD W o T =100 C 16.3 C o T =25 C 4.4 A (Note 4) Continuous Drain Current I A D o T =70 C 3.5 A o T =25 C 2.4 A Power Dissipation PD W o T =70 C 1.6 A (Note 6) Single Pulse Avalanche Energy E 11 mJ AS o Operating Junction and Storage Temperature Range T ,T -55~175 C J STG Junction to Case R 4.6 JC (Note 4,5) o Typical Thermal Resistance C/W Junction to Ambient R 62.5 JA Limited only By Maximum Junction Temperature March 28,2019-REV.00 Page 1 PPJQ5458A-AU o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 60 - - DSS GS D V Gate Threshold Voltage V V =V , I =250uA 1 1.77 2.5 GS(th) DS GS D V =10V, I =8A - 37 50 GS D Drain-Source On-State Resistance R m DS(on) V =4.5V, I =4A - 42 60 GS D Zero Gate Voltage Drain Current I V =60V, V =0V - - 1 uA DSS DS GS Gate-Source Leakage Current I V =+20V, V =0V - - +100 nA GSS GS DS (Note 7) Dynamic Total Gate Charge Q - 14 - g V =30V, I =4A, DS D Gate-Source Charge Q - 2.9 - nC gs (Note 2,3) V =10V GS Gate-Drain Charge Q - 2.3 - gd Input Capacitance Ciss - 815 - V =15V, V =0V, DS GS Output Capacitance Coss - 379 - pF f=1MHZ Reverse Transfer Capacitance Crss - 110 - Turn-On Delay Time td - 3.9 - (on) V =30V, I =1A, DD D Turn-On Rise Time t - 13 - r V =10V, R =3.3 ns GS G Turn-Off Delay Time td - 23 - (off) (Note 2,3) Turn-Off Fall Time t - 6.7 - f Drain-Source Diode Maximum Continuous Drain-Source I --- - - 16 A S Diode Forward Current Diode Forward Voltage V I =1A, V =0V - 0.73 1 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2%. 2. Essentially independent of operating temperature typical characteristics. 3. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and J(MAX) duty cycles to keep initial T =25C. J 4. The maximum current rating is package limited. 5. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is 2 defined as the solder mounting surface of the drain pins. Mounted on a 1 inch with 2oz.square pad of copper. 6. The test condition is L=0.1mH, I =15A, V =25V, V =10V. AS DD GS 7. Guaranteed by design, not subject to production testing. March 28,2019-REV.00 Page 2