PPJS6601 20V Complementary Enhancement Mode MOSFET SOT-23 6L Unit: inch(mm) Voltage 20 / -20V Current 4.1 /-3.1A Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 6L Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.014 grams Marking: SC1 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL N-Ch LIMIT P-Ch LIMIT UNITS Drain-Source Voltage V 20 -20 V DS Gate-Source Voltage V +12 +12 V GS Continuous Drain Current I 4.1 -3.1 A D (Note 4) Pulsed Drain Current I 16.4 -12.4 A DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25 C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal Resistance o (Note 3) R 100 C/W JA - Junction to Ambient May 18,2016-REV.01 Page 1 PPJS6601 o N-Channel Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 20 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 0.4 0.66 1.2 V GS(th) DS GS D V =4.5V, I =4.1A - 41 56 GS D Drain-Source On-State Resistance R V =2.5V, I =2.8A - 50 68 m DS(on) GS D V =1.8V, I =1.5A - 66 95 GS D Zero Gate Voltage Drain Current I V =20V, V =0V - - 1 uA DSS DS GS Gate-Source Leakage Current I V =+12V, V =0V - - +100 nA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 4.6 - g V =10V, I =4.1A, DS D Gate-Source Charge Q - 0.8 - nC gs (Note 1,2) V =4.5V GS Gate-Drain Charge Q - 1 - gd Input Capacitance Ciss - 350 - V =10V, V =0V, DS GS Output Capacitance Coss - 40 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 29 - Turn-On Delay Time td - 4 - (on) V =10V, I =4.1A, DD D Turn-On Rise Time tr - 47 - V =4.5V, ns GS Turn-Off Delay Time td - 18 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 10 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 1.5 A S Diode Forward Current Diode Forward Voltage V I =1.0A, V =0V - 0.75 1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing May 18,2016-REV.01 Page 2