PPJT7800 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm) 20 V 1A Voltage Current Features RDS(ON) , VGS 4.5V, ID 1.0A<150m RDS(ON) , VGS 2.5V, ID 0.7A<215m RDS(ON) , VGS 1.8V, ID 0.3A<400m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std.(Halogen Free) Mechanical Data Case : SOT-363 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0002 ounces, 0.006 grams Marking : T00 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 20 V DS Gate-Source Voltage V +8 V GS Continuous Drain Current I 1 A D (Note 4) Pulsed Drain Current I 4 A DM o T =25 C 350 mW a Power Dissipation P D o o Derate above 25 C 2.8 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 357 JA - Junction to Ambient C/W May 5,2016-REV.04 Page 1 PPJT7800 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 20 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 0.5 0.8 1.0 V GS(th) DS GS D V =4.5V, I =1A - 120 150 GS D Drain-Source On-State Resistance R V =2.5V, I =0.7A - 160 215 m DS(on) GS D V =1.8V, I =0.3A - 260 400 GS D Zero Gate Voltage Drain Current I V =20V, V =0V - 0.01 1 uA DSS DS GS Gate-Source Leakage Current I V =+8V, V =0V - +2 +10 uA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 1.6 - g V =10V, I =1A, DS D Gate-Source Charge Q - 0.31 - nC gs (Note 1,2) V =4.5V GS Gate-Drain Charge Q - 0.41 - gd Input Capacitance Ciss - 92 - V =10V, V =0V, DS GS Output Capacitance Coss - 25 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 9.1 - Turn-On Delay Time td - 5.8 - (on) V =10V, I =1A, DD D Turn-On Rise Time tr - 25.8 - V =4.5V, ns GS Turn-Off Delay Time td - 42 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 32 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 1 A S Diode Forward Current Diode Forward Voltage V I =1.0A, V =0V - 0.85 1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper 4. The maximum current rating is package limited 5. Guaranteed by design, not subject to production testing. May 5,2016-REV.04 Page 2