PPJT7808 20V N-Channel Enhancement Mode MOSFET SOT-363 Unit: inch(mm) 20 V 500mA Voltage Current Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-363 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0002 ounces, 0.006 grams Marking: T08 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 20 V DS Gate-Source Voltage V +10 V GS Continuous Drain Current I 500 mA D (Note 4) Pulsed Drain Current I 1000 mA DM o T =25 C 350 mW a Power Dissipation P D o o Derate above 25 C 2.8 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 357 JA - Junction to Ambient C/W May 5,2016-REV.01 Page 1 PPJT7808 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 20 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 0.3 0.65 0.9 V GS(th) DS GS D V =4.5V, I =500mA - 280 400 GS D V =2.5V, I =200mA - 350 650 GS D Drain-Source On-State Resistance R m DS(on) V =1.8V, I =100mA - 400 800 GS D V =1.5V, I =50mA - 500 1200 GS D V =1.2V, I =20mA - 700 3000 GS D Zero Gate Voltage Drain Current I V =16V, V =0V - - 1 uA DSS DS GS Gate-Source Leakage Current I V =+8V, V =0V - +0.5 +10 uA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 1.4 - g V =10V, I =500mA, DS D Gate-Source Charge Q - 0.22 - nC gs (Note 1,2) V =4.5V GS Gate-Drain Charge Q - 0.21 - gd Input Capacitance Ciss - 67 - V =10V, V =0V, DS GS Output Capacitance Coss - 19 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 6 - Turn-On Delay Time td - 2.8 - (on) V =10V, I =150mA, DD D Turn-On Rise Time tr - 20 - V =4.0V, ns GS Turn-Off Delay Time td - 23 - (off) (Note 1,2) R =10 G Turn-Off Fall Time tf - 23 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 500 mA S Diode Forward Current Diode Forward Voltage V I =500mA, V =0V - 0.87 1.3 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. May 5,2016-REV.01 Page 2