PPJN1NA60A / PJW1NA60A / PJU1NA60A / PJD1NA60A 600V N-Channel MOSFET 600 V 1 A Voltage Current Features R , V 10V,I 0.5A<7.9 DS(ON) GS D TO-92 SOT-223 High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2.0 TO-252AA TO-251AA Green molding compound as per IEC 61249 standard Mechanical Data Case : TO-251AA, TO-252AA, SOT-223, TO-92 Package Terminals : Solderable per MIL-STD-750, Method 2026 TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams SOT-223 Approx. Weight : 0.043 ounces, 0.123grams TO-92 Approx. Weight : 0.007 ounces, 0.196grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TO-251AA TO-252AA SOT-223 TO-92 UNITS Drain-Source Voltage V 600 V DS Gate-Source Voltage V +30 V GS Continuous Drain Current I 1 0.4 A D Pulsed Drain Current I 4 1.6 A DM (Note 1) Single Pulse Avalanche Energy E 52 mJ AS o T =25 C 28 3.3 3 W C Power Dissipation P D o o Derate above 25 C 0.22 0.026 0.024 W/ C Operating Junction and o T ,T -55~150 C J STG Storage Temperature Range Typical Thermal resistance o R 4.46 - - - Junction to Case C/W JC (Note 4) R 110 37.9 140 JA - Junction to Ambient Limited only By Maximum Junction Temperature August 30,2018-REV.03 Page 1 PPJN1NA60A / PJW1NA60A / PJU1NA60A / PJD1NA60A o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V,I =250uA 600 - - V DSS GS D Gate Threshold Voltage V V =V ,I =250uA 2 3.3 4 V GS(th) DS GS D Drain-Source On-State Resistance R V =10V,I =0.5A - 7.2 7.9 DS(on) GS D Zero Gate Voltage Drain Current I V =600V,V =0V - 0.02 1.0 uA DSS DS GS Gate-Source Leakage Current I V =+30V,V =0V - +10 +100 nA GSS GS DS Diode Forward Voltage V I =1A,V =0V - 0.88 1.4 V SD S GS (Note 5) Dynamic Total Gate Charge Q - 3.1 - g V =480V, I =1A, DS D Gate-Source Charge Q - 1.3 - nC gs (Note 2,3) V =10V GS Gate-Drain Charge Q - 0.4 - gd Input Capacitance Ciss - 148 - V =25V, V =0V, DS GS Output Capacitance Coss - 28 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 0.3 - Turn-On Delay Time td - 6 - (on) V =300V, I =1A, DD D Turn-On Rise Time t - 20 - r (Note 2,3) R =25 ns G Turn-Off Delay Time td - 9 - (off) Turn-Off Fall Time t - 26 - f Drain-Source Diode Maximum Continuous Drain-Source I --- - - 1 A S Diode Forward Current Maximum Pulsed Drain-Source I --- - - 4 A SM Diode Forward Current Reverse Recovery Time trr - 190 - ns V =0V, I =1A GS S (Note 2) Reverse Recovery Charge Qrr dI / dt=100A/us - 0.53 - uC F NOTES : o 1. L=30mH, I =1.8A, V =50V, R =25 ohm, Starting T =25 C AS DD G J 2. Pulse width<300us, Duty cycle<2% 3. Essentially independent of operating temperature typical characteristics 4. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 5. Guaranteed by design, not subject to production testing August 30,2018-REV.03 Page 2