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X-On Electronics has gained recognition as a prominent supplier of 1N5408G Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1N5408G Diodes - General Purpose, Power, Switching are a product manufactured by Pingwei. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1N5408G Pingwei

1N5408G electronic component of Pingwei
1N5408G Pingwei
1N5408G Diodes - General Purpose, Power, Switching
1N5408G  Semiconductors

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See Product Specifications
Part No. 1N5408G
Manufacturer: Pingwei
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose 1kV 3A 1V @ 3A DO-201AD RoHS
Datasheet: 1N5408G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.5155 ea
Line Total: USD 2.58 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 5
Multiples : 1
5 : USD 0.5155
10 : USD 0.3346
100 : USD 0.2268
500 : USD 0.1753
1000 : USD 0.1523
5000 : USD 0.1235

0
Ship by Wed. 15 Jan to Mon. 20 Jan
MOQ : 5
Multiples : 0
5 : USD 0.1346
50 : USD 0.1092
150 : USD 0.0967
1250 : USD 0.0872
2500 : USD 0.0797
5000 : USD 0.0759

   
Manufacturer
Product Category
Package / Case
Brand
Rohs
Voltage - Dc Reverse Vr Max
Current - Average Rectified Io
Voltage - Forward Vf Max @ If
 
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We are delighted to provide the 1N5408G from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5408G and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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1N5408G 1 N 5 4 0 8 G 3 . 0 A M P S . G L A S S PA S S I VAT E D R E C T I F I E R S DO - 27/ DO - 201AD F E AT U R E .High current capability .Low forward voltage drop 0.96(24.4) .Low power loss, high efficiency .220(5.6) MIN. DIA. .High surge capability .187(5.0) .High temperature soldering guaranteed: + 260C /10sec/ 0.375 lead length at 5 lbs tension .375(9.5) M E C H A N I C A L D ATA .335(8.5) - .Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C 0.96(24.4) .Case: Molded with UL-94 Class V-0 recognized .051(1.3) MIN. DIA. Flame Retardant Epoxy (free halogen) .043(1.1) .Polarity: color band denotes cathode .Mounting position: any Dimensions in inches and (millimeters) M A X I M U M R A T I N G S A N D E L E C T R I C A L C H A R A C T E R I S T I C S Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20% 1 N 5 40 8G Type N um be r SY M BOL unit s Maximum Recurrent Peak Reverse Voltage 1000 V V RRM Maximum RMS Voltage 700 V V RM S Maximum DC blocking Voltage 1000 V V DC Maximum Average Forward Rectified Current 3.0 A I F ( AV) .375 (9.5mm) lead length at T =55C A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC I 120.0 A F S M method) Maximum Forward Voltage at 3.0A DC 1.0 V V F Maximum DC Reverse Current T =25C 5.0 A A I R at rated DC blocking voltage T =125C 100.0 A Typical Junction Capacitance (Note 1) 50 pF C J 50 R ( JA) Typical Thermal Resistance (Note 2) C/W 15 R ( JC) Storage Temperature -55 to +150 C T S TG -55 to +150 C Operation Junction Temperature T J N ote : 1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 2. Thermal Resistance from Junction to Ambient at 0.375 9.5mmlead length, vertical P.C.Board Mounted. 11N5408G RATING AND CH ARACTERI S TI C CURVES ( 1N5408G ) FIG.2-TYPICAL INSTANTANEOUS FORWARD FIG.1-TYPICAL FORWARD CURRENT CHARACTERISTICS DERATING CURVE 10.0 3.0 1.0 TJ=25 Pulse 1.5 Width=300s Single Phase Half 1% Duty Cycle Wave 60Hz Resistive .1 or inductive Load .01 0 0.9 0 100 150 200 .5 .7 1.1 1.3 50 INSTANEOUS FORWARD AMBIENT TEMPERTURE,() VOLTAGE,(V) FIG.4-TYPICAL REVERSE FIG.3-MAXIMUN NON-REPETITIVE CHARACTERISTICS FORWARD SURGE CURRENT 100 160 8.3ms Single Half Sine-Wave (JEDEC Method) 120 10 80 TJ=25 1 40 0 .1 100 120 140 100 0 20 40 60 80 1 10 PERCENT OF RATED PEAK REVERSE NUMBER OF CYCLES AT 60Hz VOLTAGE,(%) 2 PEAK FORWARD SURGE AVERGE FORWARD CURRENT,(A) RECTIFIED CURRENT,(A) INSTANEOUS REVERSE INSTANEOUS FORWARD CURRENT,(A) CURRENT,(A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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