RURD4120S9A F085 Data Sheet March 2009 4A, 1200V Ultrafast Diodes Features The RURD4120S9A F085 are ultrafast diodes with Ultrafast with Soft Recovery . <70ns soft recovery characteristics (t < 70ns). They have low rr o Operating Temperature 175 C forward voltage drop and are silicon nitride passivated Reverse Voltage 1200V ion-implanted epitaxial planar construction. Avalanche Energy Rated These devices are intended for use as freewheeling/ clamping diodes and rectiers in a variety of switching power Planar Construction supplies and other power switching applications. Their low Qualified to ACE Q101 stored charge and ultrafast soft recovery minimize ringing RoHS Compliant and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications Formerly developmental type TA49036. Switching Power Supplies Power Switching Circuits Ordering Information General Purpose Packaging PACKAGE PART NUMBER BRAND TO-252 RURD4120S9A9A F085 F085 UR4120 JEDEC STYLE TO-252 Symbol CATHODE K (FLANGE) CATHODE ANODE A o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specied C RURD4120S9A F085 UNITS Peak Repetitive Reverse Voltage V 1200 V RRM Working Peak Reverse Voltage . V 1200 V RWM DC Blocking Voltage V 1200 V R Average Rectied Forward Current .I 4A F(AV) o (T = 152 C) C Repetitive Peak Surge Current I 8A FRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current I 40 A FSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation P 50 W D Avalanche Energy (See Figures 10 and 11) . E 10 mJ AVL o Operating and Storage Temperature . T , T -65 to 175 C STG J 2009 Fairchild Semiconductor Corporation 1 RURD4120S9A F085 Rev. A RURD4120S9A F085 o Electrical Specications T = 25 C, Unless Otherwise Specied C SYMBOL TEST CONDITION MIN TYP MAX UNITS V I = 4A - - 2.1 V F F o I = 4A, T = 150 C - - 1.9 V F C I V = 1200V - - 100 A R R o V = 1200V, T = 150 C - - 500 A R C t I = 1A, dI /dt = 200A/s--70ns rr F F I = 4A, dI /dt = 200A/s--90ns F F t I = 4A, dI /dt = 200A/ s - 40 - ns a F F t I = 4A, dI /dt = 200A/ s - 28 - ns b F F Q I = 4A, dI /dt = 200A/ s - 335 - nC RR F F C V = 10V, I = 0A - 15 - pF J R F o R -- 3 C/W JC DEFINITIONS V = Instantaneous forward voltage (pw = 300 s, D = 2%). F I = Instantaneous reverse current. R t = Reverse recovery time (See Figure 9), summation of t + t . rr a b t = Time to reach peak reverse current (See Figure 9). a t = Time from peak I to projected zero crossing of I based on a straight line from peak I through 25% of I (See Figure 9). b RM RM RM RM Q = Reverse recovery time. RR C = Junction capacitance. J R = Thermal resistance junction to case. JC pw = Pulse width. D = Duty cycle. Typical Performance Curves 100 20 o 175 C 10 10 o 100 C 1 o o 175 C 25 C 0.1 o 100 C 0.01 1 o 25 C 0.001 0.5 0 200 400 600 800 1000 1200 0 0.5 1 1.5 2 2.5 3 V , REVERSE VOLTAGE (V) V , FORWARD VOLTAGE (V) R F FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE 2009 Fairchild Semiconductor Corporation 2 RURD4120S9A F085 Rev. A I , FORWARD CURRENT (A) F I , REVERSE CURRENT ( A) R