RURD660S9A-F085P ON Semiconductor

Ultrafast Power Rectifier 6 A, 600 V RURD660S9A-F085 The RURD660S9A F085 is an ultrafast diode with soft recovery characteristics (trr < 83 ns). It has a low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. www.onsemi.com This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing powerloss in the switching transistors. 1, 2, 4. Cathode 3. Anode Features High Speed Switching (t = 63 ns (Typ.) I = 6 A) 4 rr F Low Forward Voltage (V = 1.26 V (Typ.) I = 6 A) F F Avalanche Energy Rated 2 1 AECQ101 Qualified and PPAP Capable 3 This is a PbFree Device DPAK3 (TO252 3 LD) Applications CASE 369AS General Purpose MARKING DIAGRAM Switching Mode Power Supply Power Switching Circuits Y&Z&3&K ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C RUR660 Symbol Parameter Ratings Unit V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RUR660 = Specific Device Code RWM Y = ON Semiconductor Logo V DC Blocking Voltage 600 V R &Z = Assembly Plant Code &3 = 3Digit Date Code I Average Rectified Forward Current 6 A F(AV) T = 25C &K = 2Digits Lot Run Traceability Code C I Nonrepetitive Peak Surge Current 60 A FSM ORDERING INFORMATION T , T Operating Junction and Storage 55 to +175 C J STG See detailed ordering and shipping information on page 4 of Temperature this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Max Unit Maximum Thermal Resistance, 3 C/W R JC Junction to Case R Maximum Thermal Resistance, 140 C/W JA (Note 1) Junction to Ambient R Maximum Thermal Resistance, 50 C/W JA (Note 2) Junction to Ambient 1. Mounted on a minimum pad follow by JEDEC standard. 2 2. Mounted on a 1 in pad of 2 oz copper follow by JEDEC standard. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: July, 2020 Rev. 4 RURD660S9AF085/DRURD660S9A F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Condition Min Typ Max Unit I Instantaneous Reverse V = 600 V T = 25C 100 A R R C Current T = 175 500 A C V Instantaneous Forward I = 6 A T = 25C 1.26 1.5 V FM F C (Note 3) Voltage T = 175 1.04 V C t Reverse Recovery Time I = 1 A, di/dt = 200 A/ s, V = 390 V T = 25C 25 33 ns rr F CC C (Note 4) I = 6 A, di/dt = 200 A/ s, V = 390 V T = 25C 63 83 ns F CC C T = 175 119 ns C t Reverse Recovery Time I = 6 A, di/dt = 200 A/ s, V = 390 V T = 25C 23 ns a F CC C t 40 ns b Qrr Reverse Recovery Charge 151 nC W Avalanche Energy (L = 20 mH) 10 mJ AVL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse: Test Pulse width = 300 s, Duty Cycle = 2% 4. Guaranteed by design TEST CIRCUIT AND WAVEFORMS V AMPLITUDE AND GE R CONTROL dI /dt G F L t t CONTROL I 1 AND 2 F DUT CURRENT dI F t rr SENSE R I G F dt + t t a b 0 V V DD GE IGBT t 1 0.25 I RM t 2 I RM Figure 1. t Test Circuit Figure 2. trr Waveforms and Definitions rr I = 1 A L = 20 Mh R < 0.1 2 V E = 1/2LI VR(AVL) / (VR(AVL) VDD) AVL AVL Q = IGBT (BV > DUT V ) 1 CES R(AVL) L R + CURRENT I I L L V SENSE DD I V Q 1 V DD DUT t t t t 0 1 2 Figure 3. Avalanche Energy Test Circuit Figure 4. Avalanche Current and Voltage Waveforms www.onsemi.com 2