RURD420S Data Sheet January 2002 4A, 200V Ultrafast Diodes Features The RURD420S is an ultrafast diode with soft recovery Ultrafast with Soft Recovery . <30ns characteristics (t < 30ns). It has low forward voltage drop rr o Operating Temperature 175 C and has ion-implanted epitaxial planar construction. Reverse Voltage .200V This device is intended for use as a freewheeling/clamping Avalanche Energy Rated diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and Planar Construction ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the Applications switching transistors. Switching Power Supplies Formerly developmental type TA49034. Power Switching Circuits Ordering Information General Purpose PART NUMBER PACKAGE BRAND Packaging RURD420S TO-252 RUR420 JEDEC STYLE TO-252 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252 variant in tape and reel, i.e., RURD420S9A. CATHODE (FLANGE) CATHODE Symbol ANODE K A o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C RURD420S UNITS Peak Repetitive Reverse Voltage .V 200 V RRM Working Peak Reverse Voltage . V 200 V RWM DC Blocking Voltage V 200 V R Average Rectified Forward Current . I 4A F(AV) o (T = 159 C) C Repetitive Peak Surge Current .I 8A FRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current .I 40 A FSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation P 30 W D Avalanche Energy (See Figures 9 and 10) . E 10 mJ AVL o Operating and Storage Temperature . T , T -65 to 175 C STG J Maximum Lead Temperature for Soldering o (Leads at 0.063 in. (1.6mm) from case for 10s) T 300 C L o Package Body for 10s, see Tech Brief 334 . T 260 C PKG o Electrical Specifications T = 25 C, Unless Otherwise Specified C SYMBOL TEST CONDITION MIN TYP MAX UNITS V I = 4A - - 1.0 V F F o I = 4A, T = 150C--0.83V F C 2002 Fairchild Semiconductor Corporation RURD420S Rev. CRURD420S o Electrical Specifications T = 25 C, Unless Otherwise Specified C SYMBOL TEST CONDITION MIN TYP MAX UNITS I V = 200V - - 100 A R R o V = 200V, T = 150 C - - 500 A R C t I = 1A, dI /dt = 100A/s--30ns rr F F I = 4A, dI /dt = 100A/s--35ns F F t I = 4A, dI /dt = 100A/s-11-ns a F F t I = 4A, dI /dt = 100A/s-9-ns b F F Q I = 4A, dI /dt = 100A/s-12-nC RR F F C V = 10V, I = 0A - 15 - pF J R F o R -- 5 C/W JC DEFINITIONS V = Instantaneous forward voltage (pw = 300 s, D = 2%). F I = Instantaneous reverse current. R t = Reverse recovery time (See Figure 8), summation of t + t . rr a b t = Time to reach peak reverse current (See Figure 8). a t = Time from peak I to projected zero crossing of I based on a straight line from peak I through 25% of I (See Figure 8). b RM RM RM RM Q = Reverse recovery charge. RR C = Junction capacitance. J R = Thermal resistance junction to case. JC pw = pulse width. D = duty cycle. Typical Performance Curves 100 20 o 175 C o 10 175 C 10 o 1 100 C 0.1 o o 100 C 25 C 0.01 1 o 25 C 0.001 0.5 0250 100 15000 0 0.25 0.5 0.75 1 1.25 1.5 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) R F FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2002 Fairchild Semiconductor Corporation RURD420S Rev. C I , FORWARD CURRENT (A) F I , REVERSE CURRENT ( A) R