The PSD07N65 is a MOSFET N Trench 650V 7A (Tc) 4V @ 250uA 1.4 Ω @ 3.5A, 10V TO-252 RoHS manufactured by PIP. It is an electronic component, an insulated-gate field-effect transistor (IGFET). It is designed to provide power efficiency and high speed switching in various applications requiring logic level compatible gate drive. The output characteristics of the device can be tailored to meet specific requirements. It features low on-resistance and a low operating voltage. With its low gate charge, it offers high-hemispherical sensitivity, high switching efficiency, and good power dissipation. The RoHS compliant lead-free version enhances the environmental protection and meets the strict requirements of RoHS regulations. The PSD07N65 is ideal for a variety of commercial and industrial applications, such as power supplies, motor controls, data communication, solar inverters, and lighting.