X-On Electronics has gained recognition as a prominent supplier of PTA07N65B MOSFETs across the USA, India, Europe, Australia, and various other global locations. PTA07N65B MOSFETs are a product manufactured by PIP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PTA07N65B PIP

PTA07N65B electronic component of PIP
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Part No.PTA07N65B
Manufacturer: PIP
Category: MOSFETs
Description: MOSFET N Trench 650V 7A (Tc) 4V @ 250uA 1.4 Ω @ 3A,10V TO-220F RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PTA07N65B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PTA07N65B and other electronic components in the MOSFETs category and beyond.

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PTA07N65B is a MOSFET N Trench 650V 7A designed and manufactured by PIP. It has4V at 250uA drain-source breakdown voltage, 1.4O maximum drain-source on-state resistance when VGS = 10V and 3A continuous drain current. The chip is housed in TO-220F package and compliant with RoHS standards. It is designed for high-speed switching and suitable for radio frequency applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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