< Dual-In-Line Package Intelligent Power Module > PSM05S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 500V / 5A (MOSFET) N-side MOSFET open source Built-in bootstrap diodes with current limiting resistor APPLICATION AC 100~240Vrms(DC voltage:400V or below) class low power motor control TYPE NAME PSM05S93E5-A With over temperature protection INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Over temperature protection (OT) Fault signaling : Corresponding to SC fault (N-side MOSFET), UV fault (N-side supply) and OT fault Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active) UL Recognized : UL1557 File E323585 INTERNAL CIRCUIT MOSFET1 P(24) V (2) UFB V (3) VFB U(23) MOSFET2 V (4) WFB HVIC U (5) P V(22) MOSFET3 V (6) P W (7) P V (8) P1 W(21) V (9) NC MOSFET4 U (10) N V (11) N NU(20) W (12) N MOSFET5 V (13) N1 LVIC F (14) O NV(19) MOSFET6 CIN(15) VNC(16) NW(18) Publication Date : October 2013 1 < Dual-In-Line Package Intelligent Power Module > PSM05S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE MAXIMUM RATINGS (T = 25C, unless otherwise noted) ch INVERTER PART Symbol Parameter Condition Ratings Unit V Supply voltage Applied between P-NU,NV,NW 400 V DD V Supply voltage (surge) Applied between P-NU,NV,NW 450 V DD(surge) V Drain-source voltage 500 V DSS I Each MOSFET drain current T = 25C 5 A D C I Each MOSFET drain current (peak) T = 25C, less than 1ms 10 A DP C P Drain dissipation T = 25C, per 1 chip 35.7 W D C T Channel temperature (Note 1) -20~+150 C ch Note1: The maximum junction temperature rating of built-in power chips is 150C( Tc100C).However, to ensure safe operation of DIPIPM, the average channel temperature should be limited to Tch(Ave)125C ( Tc100C). CONTROL (PROTECTION) PART Symbol Parameter Condition Ratings Unit V Control supply voltage Applied between V -V , V -V 20 V D P1 NC N1 NC V Control supply voltage Applied between V -U, V -V, V -W 20 V DB UFB VFB WFB V Input voltage Applied between U , V , W -V , U , V , W -V -0.5~V +0.5 V IN P P P PC N N N NC D VFO Fault output supply voltage Applied between FO-VNC -0.5~VD+0.5 V I Fault output current Sink current at F terminal 1 mA FO O V Current sensing input voltage Applied between CIN-V -0.5~V +0.5 V SC NC D TOTAL SYSTEM Symbol Parameter Condition Ratings Unit Self protection supply voltage limit V = 13.5~16.5V, Inverter Part D V 400 V DD(PROT) (Short circuit protection capability) Tch = 125C, non-repetitive, less than 2s T Module case operation temperature Measurement point of Tc is provided in Fig.1 -20~+100 C C T Storage temperature -40~+125 C stg 60Hz, Sinusoidal, AC 1min, between connected all pins V Isolation voltage 1500 V iso rms and heat sink plate Fig. 1: T MEASUREMENT POINT C Control terminals DIPIPM 11.6mm 3mm IGBT chip position Tc point Heat sink side Power terminals THERMAL RESISTANCE Limits Symbol Parameter Condition Unit Min. Typ. Max. R Junction to case thermal resistance (Note2) 1/6 module - - 2.8 K/W th(ch-c)Q Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100m~+200m on the contacting surface of DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20m, thermal conductivity: 1.0W/mk). Publication Date : October 2013 2