LQA20T300C, LQA20B300C Qspeed Family 300 V, 20 A Q-Series Common-Cathode Diode Product Summary General Description I per diode 10 A F(AVG) This device has the lowest Q of any 300 V RR V 300 V RRM Silicon diode. Its recovery characteristics Q (Typ at 125 C) 38 nC RR increase efficiency, reduce EMI and eliminate I (Typ at 125 C) 2.3 A RRM snubbers. Softness t /t (Typ at 125 C) 0.7 b a Applications AC/DC and DC/DC output rectification Pin Assignment Output & freewheeling diodes Motor drive circuits DC-AC inverters Features Low Q , Low I , Low t RR RRM RR High dI /dt capable (1000A/s) F Soft recovery TO-220AB TO-263AB LQA20T300C LQA20B300C Benefits A1A1 KK Increases efficiency A2A2 Eliminates need for snubber circuits RoHS Compliant Reduces EMI filter component size & count Package uses Lead-free plating and Green mold Enables extremely fast switching compound.Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V Peak repetitive reverse voltage 300 V RRM I Average forward current Per Diode, T = 150 C, T = 115 C 10 A F(AVG) J C Per Device, T = 150 C, T = 115 C 20 A J C I Non-repetitive peak surge current 60 Hz, cycle 80 A FSM I Non-repetitive peak surge current cycle of t = 28 s Sinusoid, T = 25 C 350 A FSM C T Maximum junction temperature 150 C J T Storage temperature 55 to 150 C STG Lead soldering temperature Leads at 1.6mm from case, 10 sec 300 C P Power dissipation T = 25 C 52 W D C Thermal Resistance Symbol Resistance from: Conditions Rating Units R Junction to ambient TO-220AB (only) 62 C/W JA Per Diode 2.4 C/W Junction to case R JC Per Device 1.2 C/W www.powerint.com January 2011 LQA20T300C, LQA20B300C Electrical Specifications at T = 25 C (unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Units DC Characteristics per diode I Reverse current per diode V = 300 V, T = 25 C - - 25 R R J A V = 300 V, T = 125 C - 0.32 - mA R J V Forward voltage per diode I = 10 A, T = 25 C - 1.58 1.9 V F F J I = 10 A, T = 150 C - 1.36 - V F J C Junction capacitance per V = 10 V, 1 MHz - 33 - pF J R diode Dynamic Characteristics per diode t TReverse recovery time, =25 C - 12.6 - ns RR dI /dt =200 A/ s J F per diode V =200, I =10 A R F T =125 C - 24 - ns J Q TReverse recovery charge, =25 C - 10.2 16 nC RR dI /dt =200 A/ s J F per diode V =200, I =10 A R F T =125 C - 38 - nC J I TMaximum reverse =25 C - 1.3 1.7 A RRM dI /dt =200 A/ s J F recovery current, per V =200, I =10 A R F T =125 C - 2.3 - A J diode S T =25 C - 0.7 - dI /dt =200 A/ s J F t b Softness per diode= V =200, I =10 A R F T =125 C - 0.7 - J t a Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction. Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups. (For further details, see application note AN-300.) VR D1 L1 DUT I t F RR 15V Pulse generator dI /dt + F Rg t t a b Q1 0 0.1xI RRM I RRM Figure 2. Reverse Recovery Test Circuit Figure 1. Reverse Recovery Definitions 2 www.powerint.com Rev 1.5 01/11