X-On Electronics has gained recognition as a prominent supplier of QH12TZ600 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. QH12TZ600 Diodes - General Purpose, Power, Switching are a product manufactured by Power Integrations. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

QH12TZ600 Power Integrations

QH12TZ600 electronic component of Power Integrations
QH12TZ600 Power Integrations
QH12TZ600 Diodes - General Purpose, Power, Switching
QH12TZ600  Semiconductors

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See Product Specifications
Part No. QH12TZ600
Manufacturer: Power Integrations
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching H-Series 600V 12A Super-Low Qrr
Datasheet: QH12TZ600 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.375 ea
Line Total: USD 2.38 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 08 Apr to Mon. 14 Apr
MOQ : 1
Multiples : 1
1 : USD 2.487
10 : USD 2.1808
100 : USD 1.9904

0
Ship by Tue. 08 Apr to Mon. 14 Apr
MOQ : 500
Multiples : 499
500 : USD 2.1261

0
Ship by Fri. 04 Apr to Tue. 08 Apr
MOQ : 1
Multiples : 1
1 : USD 2.375
100 : USD 1.771
500 : USD 1.54
1000 : USD 1.54
10000 : USD 1.54

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Technology
Termination Style
Cnhts
Hts Code
Ifsm - Forward Surge Current
Mxhts
Product Type
Subcategory
Taric
Tradename
Trr - Reverse Recovery Time
Vrrm - Repetitive Reverse Voltage
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We are delighted to provide the QH12TZ600 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QH12TZ600 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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QH12TZ600, QH12BZ600 Qspeed Family 600 V, 12 A H-Series PFC Diode Product Summary General Description I 12 A F(AVG) This device has the lowest Q of any 600 V RR V 600 V RRM silicon diode. Its recovery characteristics Q (Typ at 125 C) 30 nC increase efficiency, reduce EMI and eliminate RR snubbers. I (Typ at 125 C) 2.2 A RRM Softness t /t (Typ at 125 C) 0.65 B A Applications Power Factor Correction (PFC) boost diode Pin Assignment Motor drive circuits DC-AC inverters NC KKKNC Features C C NC KKK Low Q , low I , low t RR RRM RR AA High dI /dt capable (1000 A / s) F Soft recovery TO-220AC TO-263AB QH12TZ600 QH12BZ600 Benefits Increases efficiency AA KK Eliminates need for snubber circuits Reduces EMI filter component size & count RoHS Compliant Package uses Lead-free plating and Enables extremely fast switching Green mold compound. Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V Peak repetitive reverse voltage T = 25 C 600 V RRM J I Average forward current T = 150 C, T = 90 C 12 A F(AVG) J C I Non-repetitive peak surge current 60 Hz, cycle, T = 25 C 100 A FSM C I Non-repetitive peak surge current cycle of t = 28 s Sinusoid, T = 25 C 350 A C FSM T Operating junction temperature range -55 to 150 C J T Storage temperature -55 to 150 C STG Lead soldering temperature Leads at 1.6 mm from case, 10 sec 300 C V Isolation voltage (leads-to-tab) AC, TO-220 2500 V ISOL V Isolation voltage (leads-to-tab) AC, TO-263 1500 V ISOL P Power dissipation T = 25 C 61 W D C www.power.com November 2015 QH12TZ600, QH12BZ600 Thermal Resistance Symbol Resistance from: Conditions Rating Units R Junction to ambient TO-220 (only) 62 C/W JA R Junction to case 2.05 C/W JC Electrical Specifications at T = 25 C (unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Units DC Characteristics V = 600 V, T = 25 C - - 250 A R J I Reverse current R V = 600 V, T = 125 C - 0.6 - mA R J I = 12 A, T = 25 C - 2.65 3.1 V F J V Forward voltage F I = 12 A, T = 150 C - 2.33 - V F J C Junction capacitance V = 10 V, 1 MHz - 34 - pF J R Dynamic Characteristics T = 25 C - 11.6 - ns dI/dt = 200 A/ s J t Reverse recovery time RR V = 400 V, I = 12 A R F T = 125 C - 20.5 - ns J T = 25 C - 9.2 14 nC dI/dt = 200 A/ s J Q Reverse recovery charge RR V = 400 V, I = 12 A R F T = 125 C - 30 - nC J T = 25 C - 1.27 1.8 A Maximum reverse dI/dt =200 A/ s J I RRM recovery current V = 400 V, I = 12 A R F T = 125 C - 2.2 - A J T = 25 C - 0.6 - t J dI/dt = 200 A/ s B Softness factor = S V = 400 V, I = 12 A T = 125 C - 0.65 - R F J tA Note to component engineers: H-Series diodes employ Schottky technologies in their design and construction. Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups. (For additional details, see Application Note AN-300.) t I F RR dI /dt F t t a b 0 0.1xI RRM I RRM Figure 2. Reverse Recovery Test Circuit. Figure 1. Reverse Recovery Definitions. 2 Rev 1.4 11/15

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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