Single Phase PSB 112 I = 84 A dAVM Rectifier Bridges V = 800-1800 V RRM Preliminary Data Sheet V V Type RSM RRM V V 800 800 PSB 112/08 1200 1200 PSB 112/12 1400 1400 PSB 112/14 1600 1600 PSB 112/16 1800 1800 PSB 112/18 Features Symbol Test Conditions Maximum Ratings Package with screw terminals T = 100C, module 84 A I C dAVM Isolation voltage 3000 V T = 45C t = 10 ms (50 Hz), sine 1200 A I VJ FSM Planar glasspassivated chips V = 0 t = 8.3 ms (60 Hz), sine 1300 A R Blocking voltage up to 1800 V T = T t = 10 ms (50 Hz), sine 1000 A VJ VJM Low forward voltage drop V = 0 t = 8.3 ms (60 Hz), sine 1100 A R UL registered, E 148688 2 2 T = 45C t = 10 ms (50 Hz), sine 7200 A s i dt VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 7200 A s R Applications 2 T = T t = 10 ms (50 Hz), sine 5000 A s Supplies for DC power equipment VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 5000 A s Input rectifiers for PWM inverter R Battery DC power supplies -40 ... + 150 C T VJ Field supply for DC motors 150 C T VJM -40 ... + 125 C T stg Advantages 50/60 HZ, RMS t = 1 min 2500 V V ISOL Easy to mount with two screws I 1 mA t = 1 s 3000 V ISOL Space and weight savings Mounting torque (M6) 5 Nm M Improved temperature and power d cycling capability Terminal connection torque (M6) 5 Nm typ. 270 g Weight Package, style and outline Dimensions in mm (1mm = 0.0394) Symbol Test Conditions Characteristic Value V = V T = 25C 0.3 mA I R RRM VJ R V = V T = T 5.0 mA R RRM VJ VJM I = 150 A T = 25C 1.7 V V F VJ F For power-loss calculations only 0.8 V V TO T = T 5 r VJ VJM m T per diode DC current 0.85 K/W R thJC per module 0.2125 K/W per diode DC current 1.05 K/W R thJK per module 0.263 K/W Creeping distance on surface 10.0 mm d S Creeping distance in air 9.4 mm d A 2 Max. allowable acceleration 50 m/s a 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 PSB 112 4 I 10 F(OV) 200 ------ I FSM I (A) FSM 2 A TVJ=45C TVJ=150C As 1.6 900 780 150 1.4 1.2 100 TVJ=45C 1 0 V RRM TVJ=150C 0.8 50 1/2 V RRM T = 150C vj I 1 V F 0.6 RRM T = 25C vj 3 10 0 1 0.4 2 4 6 10 0.5 1 1.5 2 0 1 2 3 t ms 10 10 t ms 10 10 V V F 2 Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 i dt versus time voltage drop per diode per diode I : Crest value. (1-10ms) per diode FSM t: duration 300 80 W TC PSB 112 85 100 0.18 0.1 = RTHCA K/W DC 90 250 0.26 A sin.180 95 rec.120 80 rec.60 100 200 rec.30 105 0.43 60 110 150 115 120 0.76 40 125 100 DC 130 sin.180 20 135 1.76 rec.120 50 I 140 dAV rec.60 145 0 PVTOT rec.30 C 50 100 150 200 150 0 T (C) 0 50 100 150 C 20 40 60 80 IFAVM A Tamb K Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current temperature at case temperature 1.5 K/W Z thJK Z 1 thJC 0.5 Z th 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20