Single Phase PSB 162 I = 122 A dAV Rectifier Bridges V = 800-1800 V RRM Preliminary Data Sheet V V Type RSM RRM V V ~ 800 800 PSB 162/08 1200 1200 PSB 162/12 1400 1400 PSB 162/14 ~ 1600 1600 PSB 162/16 1800 1800 PSB 162/18 Features Symbol Test Conditions Maximum Ratings Package with screw terminals T = 100C, module 122 A I C dAV Isolation voltage 3000 V T = 45C t = 10 ms (50 Hz), sine 1800 A I VJ FSM Planar glasspassivated chips V = 0 t = 8.3 ms (60 Hz), sine 1950 A R Blocking voltage up to 1800 V T = T t = 10 ms (50 Hz), sine 1600 A VJ VJM Low forward voltage drop V = 0 t = 8.3 ms (60 Hz), sine 1800 A R UL registered E 148688 2 2 T = 45C t = 10 ms (50 Hz), sine 16200 A s i dt VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 16200 A s R Applications 2 T = T t = 10 ms (50 Hz), sine 12800 A s Supplies for DC power equipment VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 13400 A s Input rectifiers for PWM inverter R Battery DC power supplies -40 ... + 150 C T VJ Field supply for DC motors 150 C T VJM -40 ... + 125 C T stg Advantages 50/60 HZ, RMS t = 1 min 2500 V V ISOL Easy to mount with two screws I 1 mA t = 1 s 3000 V ISOL Space and weight savings Mounting torque (M6) 5 Nm M Improved temperature and power d cycling capability Terminal connection torque (M6) 5 Nm typ. 270 g Weight Package, style and outline Dimensions in mm (1mm = 0.0394) Symbol Test Conditions Characteristic Value V = V T = 25C 0.3 mA I R RRM VJ R V = V T = T 5 mA R RRM VJ VJM I = 150 A T = 25C 1.65 V V F VJ F For power-loss calculations only 0.8 V V TO T = T 3 r VJ VJM m T per diode DC current 0.65 K/W R thJC per module 0.16 K/W per diode DC current 0.83 K/W R thJK per module 0.21 K/W Creeping distance on surface 10 mm d S Creeping distance in air 9.4 mm d A 2 Max. allowable acceleration 50 m/s a POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 PSB 162 5 I 10 F(OV) ------ 200 I FSM I (A) 2 FSM As TVJ=45C TVJ=150C A 1.6 1800 1600 150 1.4 TVJ=45C 4 1.2 10 100 TVJ=150C 1 0 V RRM 0.8 50 1/2 V RRM 0.6 1 V T = 150C RRM I vj F 3 T = 25C vj 10 1 2 4 6 10 0.4 0 t ms 0.5 1 1.5 2 0 1 2 3 10 10 t ms 10 10 V V F 2 Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 i dt versus time voltage drop per diode per diode I : Crest value. (1-10ms) per diode (or thyristor) FSM t: duration 70 400 TC 150 75 W DC PSB 162 0.120.05 = RTHCA K/W 80 A sin.180 350 85 0.18 rec.120 90 rec.60 300 95 rec.30 100 100 250 0.31 105 110 200 115 0.56 120 50 150 125 DC 130 100 sin.180 1.3 135 rec.120 I dAV 140 50 rec.60 145 0 rec.30 PVTOT C 50 100 150 200 150 0 T (C) 25 75 125 0 50 100 150 C IFAVM A Tamb K Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current temperature at case temperature 1 K/W Z thJK 0.8 Z thJC 0.6 0.4 0.2 Z th 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20