Single Phase PSB 82 I = 72A dAVM Rectifier Bridges V = 800-1800 V RRM Preliminary Data Sheet V V Type RSM RRM V V 800 800 PSB 82/08 ~ 1200 1200 PSB 82/12 ~ 1400 1400 PSB 82/14 1600 1600 PSB 82/16 1800 1800 PSB 82/18 Features Symbol Test Conditions Maximum Ratings Package with screw terminals T = 100C, module 72 A I C dAVM Isolation voltage 3000 V T = 45C t = 10 ms (50 Hz), sine 750 A I VJ FSM Planar glasspassivated chips V = 0 t = 8.3 ms (60 Hz), sine 820 A R Blocking voltage up to 1800 V T = T t = 10 ms (50 Hz), sine 670 A VJ VJM Low forward voltage drop V = 0 t = 8.3 ms (60 Hz), sine 740 A R UL registered E 148688 2 2 T = 45C t = 10 ms (50 Hz), sine 2800 A s i dt VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 2800 A s R Applications 2 T = T t = 10 ms (50 Hz), sine 2250 A s Supplies for DC power equipment VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 2250 A s Input rectifiers for PWM inverter R Battery DC power supplies -40 ... + 150 C T VJ Field supply for DC motors 150 C T VJM -40 ... + 125 C T stg Advantages 50/60 HZ, RMS t = 1 min 2500 V V ISOL Easy to mount with two screws I 1 mA t = 1 s 3000 V ISOL Space and weight savings Mounting torque (M5) 5 Nm M Improved temperature and power d cycling capability Terminal connection torque (M5) 5 Nm typ. 160 g Weight Package, style and outline Dimensions in mm (1mm = 0.0394) Symbol Test Conditions Characteristic Value V = V T = 25C 0.3 mA I R RRM VJ R V = V T = T 5 mA R RRM VJ VJM I = 150 A T = 25C 1.6 V V F VJ F For power-loss calculations only 0.8 V V TO T = T 5 r VJ VJM m T per diode DC current 1.1 K/W R thJC per module 0.28 K/W per diode DC current 1.52 K/W R thJK per module 0.38 K/W Creeping distance on surface 10 mm d S Creeping distance in air 9.4 mm d A 2 Max. allowable acceleration 50 m/s a POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 PSB 82 4 I 10 F(OV) 200 ------ I FSM 2 I (A) As FSM A TVJ=45C TVJ=150C 1.6 750 670 150 TVJ=45C 1.4 3 TVJ=150C 1.2 10 100 1 0 V RRM 0.8 50 1/2 V RRM T = 150C vj 1 V 0.6 RRM T = 25C I vj F 2 10 0.4 1 2 4 6 10 0 0 1 2 3 0.5 1 1.5 2 t ms 10 10 t ms 10 10 V V F 2 Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 i dt versus time voltage drop per diode per diode I : Crest value. (1-10ms) per diode (or thyristor) FSM t: duration 200 95 TC W PSB 82 80 100 0.350.22 = RTHCA K/W DC 175 A 0.47 sin.180 105 rec.120 150 110 rec.60 60 rec.30 115 0.73 125 120 100 40 125 1.23 75 130 DC 135 20 50 sin.180 2.72 140 rec.120 I dAV 25 rec.60 145 0 PVTOT rec.30 C 50 100 150 200 0 150 T (C) 0 50 100 150 10 30 50 70 C IFAVM A Tamb K Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current temperature at case temperature 2 K/W Z thJK 1.5 Z thJC 1 0.5 Z th 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20