Three Phase PSD 112 I = 127 A dAVM Rectifier Bridges V = 800-1800 V RRM Preliminary Data Sheet V V Type RSM RRM V V 800 800 PSD 112/08 ~ 1200 1200 PSD 112/12 ~ 1400 1400 PSD 112/14 ~ 1600 1600 PSD 112/16 1800 1800 PSD 112/18 Features Symbol Test Conditions Maximum Ratings Package with screw terminals T = 90C, module 127 A I C dAVM Isolation voltage 3000 V T = 45C t = 10 ms (50 Hz), sine 1200 A I VJ FSM Planar glasspassivated chips V = 0 t = 8.3 ms (60 Hz), sine 1300 A R Blocking voltage up to 1800 V T = T t = 10 ms (50 Hz), sine 1000 A VJ VJM Low forward voltage drop V = 0 t = 8.3 ms (60 Hz), sine 1100 A R UL registered, E148688 2 2 T = 45C t = 10 ms (50 Hz), sine 7200 A s i dt VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 7200 A s R Applications 2 T = T t = 10 ms (50 Hz), sine 5000 A s Supplies for DC power equipment VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 5000 A s Input rectifiers for PWM inverter R Battery DC power supplies -40 ... + 150 C T VJ Field supply for DC motors 150 C T VJM -40 ... + 125 C T stg Advantages 50/60 HZ, RMS t = 1 min 2500 V V ISOL Easy to mount with two screws I 1 mA t = 1 s 3000 V ISOL Space and weight savings Mounting torque (M6) 5 Nm M Improved temperature and power d cycling capability Terminal connection torque (M6) 5 Nm typ. 270 g Weight Package, style and outline Dimensions in mm (1mm = 0.0394) Symbol Test Conditions Characteristic Value V = V T = 25C 0.3 mA I R RRM VJ R V = V T = T 5.0 mA R RRM VJ VJM I = 300 A T = 25C 1.7 V V F VJ F For power-loss calculations only 0.8 V V TO T = T 4 r VJ VJM m T per diode DC current 0.9 K/W R thJC per module 0.15 K/W per diode DC current 1.08 K/W R thJK per module 0.18 K/W Creeping distance on surface 10.0 mm d S Creeping distance in air 9.4 mm d A 2 Max. allowable acceleration 50 m/s a POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 PSD 112 4 I 10 300 F(OV) ------ I FSM I (A) FSM A 2 TVJ=45C TVJ=150C As 250 1.6 900 780 200 1.4 1.2 150 TVJ=45C 1 100 0 V RRM TVJ=150C T = 150C VJ 0.8 1/2 V RRM 50 T = 25C VJ 1 V 0.6 RRM I F 3 10 0 1 0.4 2 4 6 10 0.5 1.0 1.5 2.0 0 1 2 3 t ms V V F 10 10 t ms 10 10 2 Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 i dt versus time voltage drop per diode per diode I : Crest value. (1-10ms) per diode FSM t: duration 85 400 TC 130 90 W PSD 112 DC 0.15 0.09 = RTHCA K/W A sin.180 350 95 0.22 110 rec.120 100 rec.60 300 105 rec.30 90 110 250 0.34 115 200 120 0.59 125 150 50 130 DC 100 sin.180 135 1.34 rec.120 140 50 rec.60 I dAV 145 PVTOT rec.30 C 0 0 150 50 100 150 200 50 100 0 50 100 150 IFAVM A Tamb K T (C) C Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current temperature at case temperature K/W Z 1.2 thJK 1 Z 0.8 thJC 0.6 0.4 0.2 Z th 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20