Three Phase PSD 162 I = 175 A dAV Rectifier Bridges V = 800-1800 V RRM Preliminary Data Sheet V V Type RSM RRM V V 800 800 PSD 162/08 ~ 1200 1200 PSD 162/12 ~ 1400 1400 PSD 162/14 ~ 1600 1600 PSD 162/16 1800 1800 PSD 162/18 Features Symbol Test Conditions Maximum Ratings Package with screw terminals T = 90C, module 175 A I C dAV Isolation voltage 3000 V T = 45C t = 10 ms (50 Hz), sine 1800 A I VJ FSM Planar glasspassivated chips V = 0 t = 8.3 ms (60 Hz), sine 1950 A R Blocking voltage up to 1800 V T = T t = 10 ms (50 Hz), sine 1600 A VJ VJM Low forward voltage drop V = 0 t = 8.3 ms (60 Hz), sine 1800 A R UL registered E 148688 2 2 T = 45C t = 10 ms (50 Hz), sine 16200 A s i dt VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 16200 A s R Applications 2 Supplies for DC power equipment T = T t = 10 ms (50 Hz), sine 12800 A s VJ VJM 2 Input rectifiers for PWM inverter V = 0 t = 8.3 ms (60 Hz), sine 13400 A s R Battery DC power supplies -40 ... + 150 C T VJ Field supply for DC motors 150 C T VJM -40 ... + 125 C T stg Advantages 50/60 HZ, RMS t = 1 min 2500 V V ISOL Easy to mount with two screws t = 1 s 3000 I 1 mA V ISOL Space and weight savings Mounting torque (M6) 5 Nm Improved temperature and power M d cycling capability Terminal connection torque (M6) 5 Nm typ. 270 g Weight Package, style and outline Dimensions in mm (1mm = 0.0394) Symbol Test Conditions Characteristic Value V = V T = 25C 0.3 mA I R RRM VJ R V = V T = T 5 mA R RRM VJ VJM I = 300 A T = 25C 1.55 V V F VJ F For power-loss calculations only 0.8 V V TO T = T 3 r VJ VJM m T per diode DC current 0.65 K/W R thJC per module 0.108 K/W per diode DC current 0.83 K/W R thJK per module 0.138 K/W Creeping distance on surface 10.0 mm d S Creeping distance in air 9.4 mm d A 2 Max. allowable acceleration 50 m/s a POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 PSD 162 5 I 10 F(OV) 200 ------ I FSM I (A) 2 FSM As TVJ=45C TVJ=150C A 1.6 1800 1600 150 1.4 TVJ=45C 4 1.2 10 100 TVJ=150C 1 0 V RRM 0.8 50 1/2 V RRM T = 150C vj I 0.6 1 V RRM F T = 25C 3 vj 10 0 1 2 4 6 10 0.4 0.5 1 1.5 2 t ms 0 1 2 3 10 10 t ms 10 10 V V F 2 Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 i dt versus time voltage drop per diode per diode I : Crest value. (1-10ms) per diode (or thyristor) FSM t: duration 70 600 TC 75 W PSD 162 80 0.08 0.04 = RTHCA K/W 200 0.12 85 500 DC 90 A sin.180 95 rec.120 400 100 rec.60 0.2 150 105 rec.30 125 110 300 115 0.37 100 120 200 125 DC 75 130 sin.180 0.87 135 50 rec.120 100 140 rec.60 25 I 145 dAV PVTOT rec.30 C 150 0 0 0 50 100 150 50 100 150 200 25 75 125 175 IFAVM A Tamb K T (C) C Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current temperature at case temperature 1 K/W Z thJK 0.8 Z thJC 0.6 0.4 0.2 Z th 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20