Three Phase PSD 192 I = 248 A dAV Rectifier Bridges V = 800-1800 V RRM Preliminary Data Sheet V V Type RSM RRM V V 800 800 PSD 192/08 ~ 1200 1200 PSD 192/12 ~ 1400 1400 PSD 192/14 ~ 1600 1600 PSD 192/16 1800 1800 PSD 192/18 Features Symbol Test Conditions Maximum Ratings Package with screw terminals T = 90C, module 248 A I C dAV Isolation voltage 3000 V T = 45C t = 10 ms (50 Hz), sine 2800 A I VJ FSM Planar glasspassivated chips V = 0 t = 8.3 ms (60 Hz), sine 3300 A R Blocking voltage up to 1800 V T = T t = 10 ms (50 Hz), sine 2500 A VJ VJM Low forward voltage drop V = 0 t = 8.3 ms (60 Hz), sine 2750 A R UL registered E 148688 2 2 T = 45C t = 10 ms (50 Hz), sine 39200 A s i dt VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 45000 A s R Applications 2 T = T t = 10 ms (50 Hz), sine 31200 A s Supplies for DC power equipment VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 31200 A s Input rectifiers for PWM inverter R Battery DC power supplies -40 ... + 150 C T VJ Field supply for DC motors 150 C T VJM -40 ... + 125 C T stg Advantages 50/60 HZ, RMS t = 1 min 2500 V V ISOL Easy to mount with two screws I 1 mA t = 1 s 3000 V ISOL Space and weight savings Mounting torque (M6) 5 Nm M Improved temperature and power d cycling capability Terminal connection torque (M6) 5 Nm typ. 270 g Weight Package, style and outline Dimensions in mm (1mm = 0.0394) Symbol Test Conditions Characteristic Value V = V T = 25C 0.3 mA I R RRM VJ R V = V T = T 5 mA R RRM VJ VJM I = 300 A T = 25C 1.43 V V F VJ F For power-loss calculations only 0.8 V V TO T = T 2.2 r VJ VJM m T per diode DC current 0.45 K/W R thJC per module 0.075 K/W per diode DC current 0.6 K/W R thJK per module 0.1 K/W Creeping distance on surface 10 mm d S Creeping distance in air 9.4 mm d A 2 Max. allowable acceleration 50 m/s a POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 PSD 192 5 I 10 F(OV) 200 ------ I FSM 2 I (A) FSM As A TVJ=45C TVJ=150C 1.6 2800 2500 TVJ=45C 150 1.4 TVJ=150C 4 1.2 10 100 1 0 V RRM 0.8 50 1/2 V RRM T = 150C vj I 1 V F 0.6 RRM T = 25C 3 vj 10 0 1 0.4 2 4 6 10 0.5 1 1.5 2 t ms 0 1 2 3 10 10 t ms 10 10 V V F 2 Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 i dt versus time voltage drop per diode per diode I : Crest value. (1-10ms) per diode (or thyristor) FSM t: duration 700 75 250 TC W DC PSD 192 80 0.070.03 = RTHCA K/W A sin.180 85 600 0.11 rec.120 200 90 rec.60 95 500 rec.30 100 0.18 105 150 400 110 115 300 0.32 100 120 125 DC 200 130 sin.180 50 0.75 135 rec.120 100 140 rec.60 I dAV 145 rec.30 PVTOT C 0 150 0 50 100 150 200 25 75 125 175 2250 50 100 150 IFAVM A Tamb K T (C) C Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current temperature at case temperature 1 K/W Z thJK 0.5 Z thJC Z th 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20