PSD 36T/12 Powersem

Three Phase PSD 36T I = 35 A dAVM Rectifier Bridge PSD 36TN V = 1200 V to 2200 V RRM Preliminary Data Sheet Type Number V V RSM RRM Gold-plated Nickel-plated V V terminals terminals 1200 1200 PSD 36T/12 PSD 36TN/12 ~ 1400 1400 PSD 36T/14 PSD 36TN/14 ~ ~ 1600 1600 PSD 36T/16 PSD 36TN/16 1800 1800 PSD 36T/18 PSD 36TN/18 2000 2000 PSD 36T/20 PSD 36TN/20 2200 2200 PSD 36T/22 PSD 36TN/22 Features gold- or nickel-plated FASTON Symbol Test Conditions Maximum Ratings terminals I T = 62C per module 35 A dAVM c Isolation voltage 3000 V~ Mesa glass-passivated chips I T = 45C, V = 0 V t = 10 ms 50 Hz, sine 550 A FSM vj R Blocking voltage up to 2200 V T = T , V = 0 V t = 10 ms 50 Hz, sine 500 A vj vjm R Low forward voltage drop 2 2 UL registered E 148688 i dt Tvj = 45C, VR = 0 V t = 10 ms 50 Hz, sine 1520 A s Tvj -40 ... +150 C Applications Supplies for DC power equipment Tvjm 150 C Input rectifiers for PWM inverters T -40 ... +150 C stg Battery DC power supplies Field supply of DC motors V 50/60 Hz, RMS t = 1 min 2500 V~ isol I 1mA t = 1 s 3000 V~ isol Advantages Easy to mount with one screw M Mounting torque (M5) 210% Nm d Space and weight savings (10-32 UNF) 1810% lb in Improved temperature and power Weight typ. 22 g cycling capability Package style and outline Symbol Test Conditions Characteristic Value IR VR = VRRM Tvj = 25C 0.3 mA V = V T = T 2.0 mA R RRM vj vjm V I = 150 A T = 25C 1.7 V F F vj V For power-loss calculations only 0.8 V TO r T = T 7.4 m T vj vjm R per diode DC current 7.5 K/W th(j-c) per module 1.25 K/W R per diode DC current 8.4 K/W th(j-s) per module 1.4 K/W dS Creeping distance on surface 12.7 mm dA Creeping distance on air 9.4 mm 2 a Maximum allowable acceleration 50 m/s Data according to IEC 60747 refers to a single diode unless otherwise stated Dimensions in mm (1mm = 0.0394) www.powersem.com Page 1/2 info powersem.de v2.00 2013 POWERSEM reserves the right to change limits, test conditions and dimensionsPSD 36T PSD 36TN 4 10 I 200 F(OV) ------ I 2 FSM 1:T = 150C As I (A) VJ FSM A TVJ=45C TVJ=150C 2:T = 25C VJ 1.6 480 500 150 1.4 3 1.2 10 TVJ=45C 100 TVJ=150C 1 0 V RRM 50 0.8 1/2 V RRM I 1 0.6 1 V RRM F 2 2 10 0 1 0.4 2 4 6 10 0.5 1 1.5 2 2.5 0 1 2 3 t ms V V 10 10 t ms 10 10 F 2 Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 i dt versus time voltage drop per diode per diode I : Crest value. FSM (1-10ms) per diode (or thyristor) t:duration 50 70 TC 55 W 50 60 0.36 = RTHCA K/W DC 60 65 A 0.71 sin.180 70 rec.120 75 40 rec.60 50 80 rec.30 85 1.43 90 30 40 95 100 105 30 2.86 20 110 115 DC 120 20 125 sin.180 10 7.14 130 rec.120 135 I 10 dAV rec.60 140 0 rec.30 145 PVTOT C 50 100 150 200 150 0 T (C) 20 0 50 100 150 C IFAVM A Tamb K Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current temperature at case temperature 8 K/W Z thJK Z thJC 6 4 2 Z th 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode (or thyristor), calculated www.powersem.com Page 2/2 info powersem.de v2.00 2013 POWERSEM reserves the right to change limits, test conditions and dimensions