Three Phase PSD 41 I = 70 A dAVM Rectifier Bridges V = 800-1800 V RRM Preliminary Data Sheet V V Type RSM RRM V V 800 800 PSD 41/08 ~ 1200 1200 PSD 41/12 ~ 1400 1400 PSD 41/14 ~ 1600 1600 PSD 41/16 1800 1800 PSD 41/18 Features Symbol Test Conditions Maximum Ratings Package with fast-on terminals T = 100C, module 70 A I C dAVM Isolation voltage 3000 V T = 45C t = 10 ms (50 Hz), sine 550 A I VJ FSM Planar glasspassivated chips V = 0 t = 8.3 ms (60 Hz), sine 600 A R Blocking voltage up to 1800 V T = T t = 10 ms (50 Hz), sine 500 A VJ VJM Low forward voltage drop V = 0 t = 8.3 ms (60 Hz), sine 550 A R UL registered E 148688 2 2 T = 45C t = 10 ms (50 Hz), sine 1520 A s i dt VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 1520 A s R Applications 2 T = T t = 10 ms (50 Hz), sine 1250 A s Supplies for DC power equipment VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 1250 A s Input rectifiers for PWM inverter R Battery DC power supplies -40 ... + 150 C T VJ Field supply for DC motors 150 C T VJM -40 ... + 125 C T stg Advantages 50/60 HZ, RMS t = 1 min 2500 V V ISOL Easy to mount with two screws I 1 mA t = 1 s 3000 V ISOL Space and weight savings Mounting torque (M5) 5 Nm M Improved temperature and power d cycling capability typ. 100 g Weight Package, style and outline Dimensions in mm (1mm = 0.0394) Symbol Test Conditions Characteristic Value V = V T = 25C 0.5 mA I R RRM VJ R V = V T = T 10 mA R RRM VJ VJM I = 150 A T = 25C 1.7 V V F VJ F For power-loss calculations only 0.8 V V TO T = T 8 m r VJ VJM T per diode DC current 1.45 K/W R thJC per module 0.242 K/W per diode DC current 1.90 K/W R thJK per module 0.317 K/W Creeping distance on surface 16.1 mm d S Creeping distance in air 7.5 mm d A 2 Max. allowable acceleration 50 m/s a POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 PSD 41 4 I 10 F(OV) ------ I 30 FSM 2 I (A) As FSM A TVJ=45C TVJ=150C 25 T=150C 1.6 550 500 1.4 20 TVJ=45C 3 1.2 10 15 TVJ=150C 1 10 0 V RRM 0.8 5 1/2 V RRM I T=25C F 1 V 0.6 RRM 0 2 V V 10 F 1 1.5 0.4 1 2 4 6 10 0 1 2 3 t ms 10 10 t ms 10 10 2 Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 i dt versus time voltage drop per diode per diode I : Crest value. (1-10ms) per diode (or thyristor) FSM t: duration 100 200 TC W PSD 41 105 80 0.380.26 = RTHCA K/W DC 175 A 110 0.51 sin.180 rec.120 150 115 rec.60 60 rec.30 120 125 0.76 125 100 40 1.26 130 75 135 DC 20 50 sin.180 2.76 140 rec.120 I dAV 25 rec.60 145 0 rec.30 C PVTOT 50 100 150 200 150 0 0 50 100 150 T (C) 20 40 60 C IFAVM A Tamb K Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current temperature at case temperature 3 K/W Z thJK 2 Z thJC 1 Z th 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20