Three Phase PSD 51 I = 85 A dAVM Rectifier Bridges V = 800-1800 V RRM Preliminary Data Sheet V V Type RSM RRM V V 800 800 PSD 51/08 ~ 1200 1200 PSD 51/12 ~ 1400 1400 PSD 51/14 ~ 1600 1600 PSD 51/16 1800 1800 PSD 51/18 Features Symbol Test Conditions Maximum Ratings Package with fast-on terminals T = 100C, module 85 A I C dAVM Isolation voltage 3000 V T = 45C t = 10 ms (50 Hz), sine 750 A I VJ FSM Planar glasspassivated chips V = 0 t = 8.3 ms (60 Hz), sine 820 A R Blocking voltage up to 1800 V T = T t = 10 ms (50 Hz), sine 600 A VJ VJM Low forward voltage drop V = 0 t = 8.3 ms (60 Hz), sine 700 A R UL registered E 148688 2 2 T = 45C t = 10 ms (50 Hz), sine 2800 A s i dt VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 2820 A s R Applications 2 T = T t = 10 ms (50 Hz), sine 2200 A s Supplies for DC power equipment VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 2250 A s Input rectifiers for PWM inverter R Battery DC power supplies -40 ... + 150 C T VJ Field supply for DC motors 150 C T VJM -40 ... + 125 C T stg Advantages 50/60 HZ, RMS t = 1 min 2500 V V ISOL Easy to mount with two screws I 1 mA t = 1 s 3000 V ISOL Space and weight savings Mounting torque (M5) 5 Nm M Improved temperature and power d cycling capability typ. 100 g Weight Package, style and outline Dimensions in mm (1mm = 0.0394) Symbol Test Conditions Characteristic Value V = V T = 25C 0.5 mA I R RRM VJ R V = V T = T 10 mA R RRM VJ VJM I = 150 A T = 25C 1.6 V V F VJ F For power-loss calculations only 0.8 V V TO T = T 6 m r VJ VJM T per diode DC current 1.3 K/W R thJC per module 0.22 K/W per diode DC current 1.6 K/W R thJK per module 0.27 K/W Creeping distance on surface 16.1 mm d S Creeping distance in air 7.5 mm d A 2 Max. allowable acceleration 50 m/s a 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 PSD 51 4 I 10 F(OV) ------ I 2 FSM As I (A) 200 FSM TVJ=45C TVJ=150C A 1.6 750 675 TVJ=45C 150 1.4 3 TVJ=150C 1.2 10 100 1 0 V RRM 0.8 1/2 V 50 RRM T = 150C 1 V 0.6 vj RRM T = 25C I vj F 2 10 0.4 1 2 4 6 10 0 0 1 2 3 t ms 10 10 t ms 10 10 0.5 1 1.5 2 V V F 2 Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 i dt versus time voltage drop per diode per diode I : Crest value. (1-10ms) per diode (or thyristor) FSM t: duration 85 300 TC W PSD 51 90 100 0.2 0.12 = RTHCA K/W DC 95 250 0.28 A sin.180 100 rec.120 80 rec.60 105 200 rec.30 0.45 110 60 115 150 120 0.78 40 125 100 130 DC sin.180 20 135 1.78 rec.120 50 140 I dAV rec.60 145 0 rec.30 PVTOT C 50 100 150 200 150 0 T (C) C 0 50 100 150 20 40 60 80 IFAVM A Tamb K Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current temperature at case temperature K/W 2 Z thJK Z thJC 1 Z th 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20