Three Phase PSD 82 I = 88 A dAV Rectifier Bridge V = 800-1800V RRM Preliminary Data Sheet V V Type RSM RRM V V DSM DRM (V) (V) 800 800 PSD 82/08 1200 1200 PSD 82/12 1400 1400 PSD 82/14 1600 1600 PSD 82/16 1800 1800 PSD 82/18 Features Symbol Test Conditions Maximum Ratings I T = 110 C, (per module) 88 A Package with screw terminals dAVM C I T = 45 C t = 10 ms (50 Hz), sine 750 A Isolation voltage 3000 V FSM VJ V = 0 t = 8.3 ms (60 Hz), sine 820 A Planar glass passivated chips R T = T t = 10 ms (50 Hz), sine 670 A Blocking voltage up to 1800 V VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 740 A Low forward voltage drop R 2 UL registered E 148688 i dt T = 45 C t = 10 ms (50 Hz), sine 2800 As VJ V = 0 t = 8.3 ms (60 Hz), sine 2800 As R Applications T = T t = 10 ms (50 Hz), sine 2250 As VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 2250 As Supplies for DC power equipment R T -40... + 150 C Input rectifier for PWM inverter VJ T 150 C VJM Battery DC power supplies T -40... + 125 C stg Field supply for DC motors V 50/60 Hz, RMS t = 1 min 2500 V ISOL Advantages I 1 mA t = 1 s 3000 V ISOL M Mounting torque (M5) 5 Nm d Easy to mount with two screws Terminal connection torque (M5) 5 Nm Space and weight savings Weight typ. 160 g Improved temperature and power cycling capability Symbol Test Conditions Characteristic Value Package style and outline I V = V T = 25C 0.3 mA R RRM, VJ R Dimensions in mm (1mm = 0.0394) V = V T = T 5 mA R RRM, VJ VJM V I = 150 A, T = 25 C 1.6 V F F VJ V For power-loss calculations only 0.8 V TO r 5 m T R per diode DC current 1.1 K/W thJC per module 0.183 K/W R per diode DC current 1.52 K/W thJK per module 0.253 K/W d Creeping distance on surface 10.0 mm s d Creeping distance in air 9.4 mm A a Max. allowable acceleration 50 m/s Data according to IEC 60747 refer to a single diode unless otherwise stated POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20200 A 150 100 50 T = 150C vj T = 25C I vj F 0 1 0.5 1.5 2 V V F 2 Fig. 1 Forward current versus Fig. 2 Surge overload current per Fig. 3 i dt versus time (1-10ms) voltage drop per diode diode I : Crest value. t: duration per diode (or thyristor) FSM Fig.5 Maximum forward current at Fig. 4 Power dissipation versus direct output case temperature current and ambient temperature 2 K/W Z thJK 1.5 Z thJC 1 0.5 Z th 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20