D10040200GT D10040200GT GaAs Power Doubler Hybrid 40MHz to 1000MHz Package: SOT-115J The D10040200GT is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from Features 40MHz to 1000MHz. It provides excellent linearity and Excellent Linearity superior return loss performance with low noise and optimal Superior Return Loss Performance reliability. Extremely Low Distortion Optimal Reliability Low Noise Unconditionally Stable Under All Terminations 20.0dB Min. Gain at 1GHz 375mA Max. at 24VDC Applications 40MHz to 1000MHz CATV Amplifier Systems Ordering Information D10040200GT Box with 50 pieces Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit RF Input Voltage (single tone) 75 dBmV DC Supply Over-Voltage (5 minutes) 30 V RoHS (Restriction of Hazardous Storage Temperature -40 to +100 C Substances): Compliant per EU Directive 2011/65/EU. Operating Mounting Base Temperature -30 to +100 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131204 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 1 of 3 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. D10040200GT Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max General Performance V+ = 24V T = 30C Z = Z = 75 MB S L 19.5 20.0 20.5 dB f = 50MHz Power Gain 20.0 21.5 22.0 dB f = 1000MHz 1 Slope 1.0 1.5 2.0 dB f = 40MHz to 1000MHz Flatness of Frequency Response 0.8 dB f = 40MHz to 1000MHz (Peak to Valley) 20.0 dB f = 40MHz to 320MHz 19.0 dB f = 320MHz to 640MHz Input Return Loss 17.0 dB f = 640MHz to 870MHz 16.0 dB f = 870MHz to 1000MHz 20.0 dB f = 40MHz to 320MHz 19.0 dB f = 320MHz to 640MHz Output Return Loss 18.0 dB f = 640MHz to 870MHz 17.0 dB f = 870MHz to 1000MHz Noise Figure 5.5 6.5 dB f = 50MHz to 1000MHz Total Current Consumption (DC) 350.0 375.0 mA Distortion Data 40MHz to 870MHz V+ = 24V T = 30C Z = Z = 75 MB S L CTB -64 -62 dBc 2 XMOD -60 -58 dBc 132 ch flat V = 44dBmV O CSO -65 -63 dBc 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 132 channels, NTSC frequency raster: 55.25MHz to 865.25MHz, +44dBmV flat output level. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131204 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3