ECG008B-G InGap HBT Gain Block Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment SOT-89 Package Style General Purpose Wireless Product Features Functional Block Diagram DC4GHz Backside Paddle - GND +24dBm P1dB at 1GHz +40dBm OIP3 at 1GHz 15dB Gain at 1GHz 4.6dB Noise Figure Internally matched to 50 Lead-free/green/RoHS-Compliant SOT-89 Package 1 2 3 RF IN GND RF OUT / V CC General Description Pin Configuration The ECG008B-G is a general-purpose buffer amplifier Pin No. Label that offers high dynamic range in a low-cost surface- 1 RF IN mount package. At 1000MHz, the ECG008B-G typically 2 GND provides 15dB of gain, +40dBm Output IP3, and 3 RF OUT/VCC +24dBm P1dB. Backside Paddle GND The ECG008B-G consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in a lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. This broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies. In addition, the ECG0038B-G will satisfy general amplification requirements in the DC to 4GHz frequency range such as CATV and mobile wireless. Ordering Information Part No. Description ECG008B-G InGaP HBT Gain Block ECG008B-PCB 5004000 MHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel Data Sheet: Rev. D 12-04-15 Disclaimer: Subject to change without notice - 1 of 8 - 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com ECG008B-GECG008B-G InGap HBT Gain Block Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to +150C T 40 +85 C CASE RF Input Power (Continuous) +15dBm Junction Temperature +160 C Device Current 160mA Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Operation of this device outside the parameter ranges recommended operating conditions. given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: V = +9V, R = 14, Temp.=+25C, 50 System SUPPLY BIAS Parameter Conditions Min Typ Max Units Operational Bandwidth DC 4000 MHz Gain 15 dB Output P1dB +24 dBm Freq.=1000 MHz Pout=+2 dBm/Tone, f=1MHz Output IP3 +40 dBm Noise Figure 4.6 dB 13 17.2 Gain 14.3 dB Input Return Loss 25 dB Output Return Loss 14 dB Freq.=2000 MHz Pout=+2 dBm/Tone, f=1MHz Output P1dB +23 dBm Output IP3 +34 +37 dBm Noise Figure 4.8 dB Device Voltage +6.8 +7.3 +7.8 V Device Current 120 mA Output mismatch w/o spurs 10:1 VSWR Thermal Resistance 86 C/W (1) Typical Device RF Performance Test conditions unless otherwise noted: VSUPPLY = +9V, ICC = 120 mA (typ.), RBIAS = 14, Temp.=+25C, 50 System Parameter Typical Units Frequency 100 500 900 1900 2140 2400 3500 5800 MHz Gain 14.8 14.7 14.6 14.3 14.3 14.2 14.5 12.4 dB Input Return Loss 25 26 28.5 28 25 23.2 15.4 6 dB Output Return Loss 20 19 17 13 13 12 7.9 2.7 dB Output P1dB +24.5 +24.3 +24 +23.2 +22.8 +21.8 +17.3 dBm (2) Output IP3 +41.6 +41 +40 +37 +36 +34 dBm Noise Figure 4.9 4.7 4.6 4.7 4.9 5.2 dB Notes: 1. Gain and return loss values presented above, and in the plots of the following section, are measured at the device level. Application specific performance values will differ in accordance with external components selected for the desired frequency band of operation. P1dB, OIP3 and NF data is measured using the application circuit shown on page 4. 2. Pout =+9 dBm/tone, 1MHz tone spacing. Data Sheet: Rev. D 12-04-15 Disclaimer: Subject to change without notice - 2 of 8 - 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com