ECG008 InGaP HBT Gain Block Product Features Product Description Functional Diagram GND The ECG008 is a general-purpose buffer amplifier that DC 4 GHz offers high dynamic range in a low-cost surface-mount 4 +24 dBm P1dB at 1 GHz package. At 1000 MHz, the ECG008 typically provides 15 dB of gain, +40 dBm Output IP3, and +24 dBm P1dB. +40 dBm OIP3 at 1 GHz 15 dB Gain at 1 GHz The ECG008 consists of Darlington pair amplifiers using 4.6 dB Noise Figure the high reliability InGaP/GaAs HBT process technology 1 23 and only requires DC-blocking capacitors, a bias resistor, Available in Lead-free / green and an inductive RF choke for operation. The device is RF IN GND RF OUT SOT-89 Package Style ideal for wireless applications and is available in a lead- Internally matched to 50 free/green/RoHS-compliant SOT-89 package. All devices Function Pin No. are 100% RF and DC tested. Input 1 Output/Bias 3 Applications The broadband MMIC amplifier can be directly applied to Ground 2, 4 various current and next generation wireless technologies Mobile Infrastructure such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG008 will work for other various applications within CATV / FTTX the DC to 4 GHz frequency range such as CATV and W-LAN / ISM mobile wireless. RFID WiMAX / WiBro (1) (1) Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz DC 4000 Frequency MHz 500 900 1900 2140 S21 dB 14.7 14.6 14.3 14.3 Test Frequency MHz 1000 S11 dB -26 -28.5 -28 -19.5 Gain dB 15 S22 dB -19.4 -17.4 -13.4 -15 Output P1dB dBm +24 (3) Output P1dB dBm +24.3 +24 +23.3 +19.0 Output IP3 dBm +40 Output IP3 dBm +41 +40 +37 +30.5 Noise Figure dB 4.6 Noise Figure dB 4.7 4.6 4.7 4.8 Test Frequency MHz 2000 Gain dB 13 14.3 Input Return Loss dB 25 Output Return Loss dB 14 Output P1dB dBm +23 (2) Output IP3 dBm +34 +37 Noise Figure dB 4.8 Device Voltage V 6.8 7.3 7.8 Device Current mA 120 Output mismatch w/o spurs VSWR 10:1 1. Test conditions unless otherwise noted: 25 C, Supply voltage = +9 V, Rbias = 14 , 50 system. 2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Ordering Information Storage Temperature -65 to +150 C RF Input Power (continuous) +15 dBm Part No. Description Device Current 160 mA InGaP HBT Gain Block ECG008B-G Junction Temperature +160 C (lead-free/green/RoHS-compliant SOT-89 package) Thermal Resistance ECG008B-PCB 700 2400 MHz Fully Assembled Eval. Board 86 C/W Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales wj.com Web site: www.wj.com, www.TriQuint.com Page 1 of 4 January 2008 ECG008 InGaP HBT Gain Block (3) Typical Device RF Performance Supply Bias = +9 V, R = 14 , I = 120 mA bias cc Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S21 dB 14.8 14.7 14.6 14.3 14.3 14.2 14.5 12.4 S11 dB -25 -26 -28.5 -28 -25 -23.2 -15.4 -6 S22 dB -20 -19 -17 -13 -13 -12 -7.9 -2.7 Output P1dB dBm +24.5 +24.3 +24 +23.2 +22.8 +21.8 +17.3 Output IP3 dBm +41.6 +41 +40 +37 +36 +34 Noise Figure dB 4.9 4.7 4.6 4.7 4.9 5.2 1. Test conditions: T = 25 C, Supply Voltage = +9 V, Device Voltage = 7.3 V, Rbias = 14 , Icc = 120 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. The performance data does not account for losses attributed to recommended input and output series resistances shown in the application circuit on page 3. Gain vs. Frequency S11, S22 vs. Frequency Vde vs. Icc 0 140 20 -5 120 S22 18 -10 100 -15 16 80 S11 +25C -20 60 14 -25 40 -30 12 20 -35 +25C -40C +85C -40 0 10 0123 4 5 6 0.0 2.0 4.0 6.0 8.0 10.0 500 1000 1500 2000 2500 3000 Frequency (MHz) Frequency (GHz) Vde (V) OIP3 vs. Frequency Noise Figure vs. Frequency P1dB vs. Frequency 45 30 5 4.5 25 40 4 20 35 3.5 3 15 30 2.5 +25C -40C +85C +25C -40C +85C 10 2 25 500 1000 1500 2000 500 1000 1500 2000 2500 3000 500 1000 1500 2000 2500 3000 Frequency (MHz) Frequency (MHz) Frequency (MHz) S-Parameters (V = +7.3 V, I = 120 mA, T = 25C, calibrated to device leads) device CC Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 -24.87 176.05 14.88 177.77 -18.94 -1.51 -20.41 -4.20 500 -26.14 167.68 14.71 161.26 -18.94 -5.99 -19.43 -39.76 1000 -28.46 166.94 14.60 142.99 -19.02 -11.44 -17.47 -72.27 1500 -30.86 -178.22 14.39 125.46 -18.94 -16.56 -15.40 -95.62 2000 -28.14 -144.76 14.30 108.38 -18.86 -21.00 -13.40 -116.18 2500 -23.15 -137.68 14.20 91.08 -18.64 -25.54 -11.63 -133.34 3000 -18.78 -150.37 14.30 74.41 -18.20 -29.98 -9.65 -151.20 3500 -15.39 -171.26 14.48 56.29 -17.52 -36.74 -7.83 -171.17 4000 -12.91 161.38 14.65 35.57 -16.85 -45.50 -6.06 165.56 4500 -10.59 132.87 14.51 13.60 -16.36 -56.53 -4.68 141.33 5000 -8.44 105.27 14.04 -8.75 -16.20 -68.74 -3.62 117.07 5500 -6.76 80.71 13.17 -31.25 -16.26 -81.52 -2.87 94.30 6000 -5.43 61.63 12.10 -50.89 -16.59 -93.75 -2.41 73.89 Device S-parameters are available for download off of the website at: