QPC3025 High Power, SOI, SPDT Switch Product Overview The QPC3025 is a Silicon on Insulator (SOI) single-pole, double-throw (SPDT) switch, designed for use in 4G/5G wireless infrastructure applications and other high performance communications systems. It offers low insertion loss in a symmetric topology with excellent linearity. The switch can handle up to 20W CW and 30W pulsed power with 50 Ohm load. No blocking capacitors are 32 Pin 5mmx5mm leadless SMT Package necessary on the RF ports. The switch ports are reflective. The QPC3025 is +1.8V logic compatible and has a single- pin solution to disable the Negative Voltage Generator and supply negative voltage from off-chip, if necessary. Key Features The QPC3025 is packaged in a RoHS-compliant, compact 30 MHz to 4200 MHz Operation 5x5 mm surface-mount leadless package. Symmetric Switch Structure 0.35dB Insertion Loss at 2 GHz Power Handling: 30W pulsed power 20W CW 39 dB High Isolation at 2 GHz Functional Block Diagram +1.8 V Logic Compatible +2.7 Vto +5.5 V Single DC Supply 32 31 30 29 28 27 26 25 GND 1 24 GND RF1 2 23 RF2 3 22 GND GND Applications GND 4 21 GND 5 20 GND GND Repeaters/Boosters 6 19 GND GND Test and Measurement Equipment CMOS Logic/ Control Circuitry 7 18 GND GND 8 17 GND GND 9 10 11 12 13 14 15 16 Top View Ordering Information Part No. Description QPC3025TR13 1000 pcs on a 13 reel QPC3025EVB-01 Evaluation board Datasheet, December 22, 2021 Subject to change without notice 1 of 10 www.qorvo.com GND GND GND GND GND GND VDD GND Vctrl RFC GND GND GND GND VSS/GND GND QPC3025 High Power, SOI, SPDT Switch Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature -50 to 150C VDD +2.7 +5.0 +5.50 V VDD +6 V VSS, (Internal NVG disabled) 5.5 5.0 3.15 V VCTRL -0.3V to +6V Pin (RFC RFX), CW, 50 43 dBm Pin, 80-2000 MHz 45.5 dBm Pin Hot-Switching, CW, 50 15 dBm Pin, 2000-2700 MHz 45 dBm 80-2000 MHz 45 dBm Pin (RFC RFX) Pin, 2700-4200 MHz 44 dBm Pulsed with 10% DC 2000-2700 MHz 44.5 dBm 5ms period, 50 Operation of this device outside the parameter ranges given above 2700-4200 MHz 43.5 dBm may cause permanent damage. TCASE 40 +85 C 6 Tj at MTTF>10 hrs +125 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions, unless otherwise noted: Temp = 25C, VDD = +5V. Parameter Conditions Min Typ Max Units Operational Frequency Range 30 4200 MHz 30 1000 MHz 0.35 dB 1000 2000 MHz 0.35 dB (1) Insertion Loss 2000 3000 MHz 0.39 dB 3000 4200 MHz 0.41 dB 30 1000 MHz 46 dB 1000 2000 MHz 38.5 dB (1) Isolation, RFC-RFX 2000 3000 MHz 35 dB 3000 4200 MHz 29 dB 30 1000 MHz 47.5 dB 1000 2000 MHz 40 dB (1) Isolation, RFX-RFX 2000 3000 MHz 36 dB 3000 4200 MHz 30 dB 30 1000 MHz 33 dB 1000 2000 MHz 25 dB Return Loss, RFC 2000 3000 MHz 23 dB 3000 4200 MHz 22 dB 30 1000 MHz 35 dB 1000 2000 MHz 25 dB Return Loss, RFX 2000 3000 MHz 23 dB 3000 4200 MHz 25 dB 80 2000 MHz +45.5 dBm (2) Input P0.1dB 2000 2700 MHz +45 dBm 2700 4200 MHz +44 dBm Input IP3 RFC-RFX, 2000 MHz, 32dBm/tone, 1MHz f 74 dBm 2F0, F0 = 1GHz at +45dBm 90 dBc Pulsed power (10% DC, 5ms period) Harmonics 3F0, F0 = 1GHz at +45dBm 87 dBc Pulsed power (10% DC, 5ms period) Notes: 1. Production screening tests are done at 1000MHz and 2000MHz. 2. This is just a linearity figure of merit. Refer to Recommended Operating Conditions table for Pin levels Datasheet, December 22, 2021 Subject to change without notice 2 of 10 www.qorvo.com