X-On Electronics has gained recognition as a prominent supplier of RFPA0133 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. RFPA0133 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

RFPA0133 Qorvo

RFPA0133 electronic component of Qorvo
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Part No.RFPA0133
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 380-960MHz Gain 32dB Pout 30dBm CW
Datasheet: RFPA0133 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.49 ea
Line Total: USD 14.49 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 14.49
10 : USD 12.6
100 : USD 11.34

   
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We are delighted to provide the RFPA0133 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFPA0133 and other electronic components in the RF Amplifier category and beyond.

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RFPA0133 3 TO 5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER Package Style: QFN, 16-Pin, 3mmx3mm 16 15 14 13 Features NC 1 12 G8 0.5W CW Output Power at 3.6V GND 2 11 NC 1W CW Output Power at 5V 32dB Small Signal Gain at 900MHz RF IN 3 10 RF OUT/VCC2 >60% Efficiency P SAT Digitally Controlled Output NC 4 9 RF OUT/VCC2 Power 5 6 7 8 380MHz to 960MHz Frequency Range High Isolation Functional Block Diagram Applications Product Description Analog Communication Systems The RFPA0133 is a 3V to 5V high efficiency programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero- 900MHz Spread Spectrum junction Bipolar Transistor (HBT) process. The device has been designed Systems to offer saturated efficiency greater than 60% over a range of frequencies 400MHz Industrial Radios from 380MHz to 960MHz. Driver Stage for Higher Power Applications 3V to 5V Applications High Isolation Buffer Ordering Information RFPA0133SQ Sample Bag with 25 Pieces RFPA0133SR 7 Reel with 100 Pieces RFPA0133TR7 7 Reel with 2500 Pieces RFPA0133PCK-410 860MHz to 930MHz PCBA with 5-piece Sample Bag RFPA0133PCK-411 430MHz to 470MHz PCBA with 5-piece Sample Bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS RF MEMS InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2012, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS120206 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 9 NC VBIAS PD NC NC VCC1 NC G16RFPA0133 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Supply Voltage -0.5 to +5.25 V Exceeding any one or a combination of the Absolute Maximum Rating conditions may DC cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Power Down Voltage (V ) -0.5 to +3.3 V PD mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. V -0.5 to +3.3 V BIAS RoHS status based on EUDirective2002/95/EC (at time of this document revision). DC Supply Current 500 mA The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Input RF Power +10 dBm infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Output Load VSWR (See Note) 6:1 RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Ambient Operating Temperature -40 to +85 C Storage Temperature -40 to +150 C Note: Due to high efficiency of this PA, the maximum ICC should always be less than 400mA. Only under short term poor VSWR conditions is 500mA acceptable. Specification Parameter Unit Condition Min. Typ. Max. T=25 C, V =3.6V, V =V =3.0V, CC PD BIAS Overall P =0dBm, Freq=915MHz IN CW Output Power 27.5 dBm V =3.6V CC CW Output Power 30 dBm V =5V CC Small Signal Gain 32 dB P =-10dBm IN Second Harmonic 23 dBc Without external second harmonic trap Third Harmonic 45 dBc CW Efficiency 55 63 % G16=high, G8=high, P =0dBm IN Power Down ON 3.0 V Voltage supplied to the input Power Down OFF 0 0.5 0.8 V Voltage supplied to the input VPD Input Current 6 mA Only in ON state G16, G8 ON 1.7 3.0 V Voltage supplied to the input G16, G8 OFF 0 0.7 V Voltage supplied to the input G16, G8 Input Current 1.0 mA Only in ON state Output Power 26.5 27.5 29 dBm G16=high, G8=high, P =0dBm IN 21 23 25 dBm G16=high, G8=low, P =0dBm IN 14 16 18 dBm G16=low, G8=high, P =0dBm IN 3 5 8 dBm G16=low, G8=low, P =0dBm IN Turn On/Off Time 200 ns Power Supply Power Supply Voltage 3.6 V Specifications Power Supply Current 230 mA G16=high, G8=high, P =0dBm IN 150 mA G16=high, G8=low, P =0dBm IN 65 mA G16=low, G8=high, P =0dBm IN 35 mA G16=low, G8=low, P =0dBm IN Idle Current 40 75 110 mA G16=high, G8=high, No RF In 60 200 nA G16=low, G8=low, PD=low. No RF IN. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 9 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. DS120206

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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RFMD (Qorvo)
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