RFPA3809 GaAs HBT 400MHz to 2700MHz Power Ampli- fier RFPA3809 GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features High Linearity: OIP3=49dBm (880MHz) Low Noise: NF=3.1dB (2140MHz) P1dB>29dBm 400MHz to 2700MHz Operation Thermally Enhanced Slug Package Applications GaAs Pre-Driver for Base Station Amplifiers Functional Block Diagram PA Stage for Commercial Wireless Infrastructure Product Description Class AB Operation for DCS, PCS, The RFPA3809 is a GaAs HBT linear power amplifier specifically designed for Wire- UMTS, LTE, and WLAN less Infrastructure applications. Using a highly reliable GaAs HBT fabrication pro- Transceiver Applications cess, this high performance single-stage amplifier achieves ultra-high linearity over 2nd/3rd Stage LNA for Wireless a broad frequency range. It also offers low noise figure making it an excellent solu- Infrastructure tion for 2nd and 3rd stage LNAs. The RFPA3809 also exhibits excellent thermal per- formance through the use of a thermally-enhanced plastic surface-mount slug package. Ordering Information RFPA3809SQ Sample Bag with 25 pieces RFPA3809SR 7 Reel with 100 pieces RFPA3809TR13 13 Reel with 2500 pieces RFPA3809PCK-410 869MHz to 894MHz PCBA with 5-piece Sample Bag RFPA3809PCK-411 2110MHz to 2170MHz PCBA with 5-piece Sample Bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS130130 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 11RFPA3809 Absolute Maximum Ratings Parameter Rating Unit Caution ESD sensitive device. Supply Voltage (V and V ) 6.5 V CC BIAS Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Reference Current (I)5 mA REF mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. DC Supply Current (I)768 mA C RoHS status based on EUDirective2002/95/EC (at time of this document revision). CW Input Power, 2:1 Output VSWR 26 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Output Load VSWR at P3dB 5:1 infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Operating Junction Temperature 160 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Operating Temperature Range (T ) -40 to +85 C L Storage Temperature -55 to +150 C ESD Rating: Human Body Model Class 1B Moisture Sensitvity Level MSL 2 Notes: 1. The maximum ratings must all be met simultaneously. 2. Pdiss = P +P -P DC RFIN RFOUT 3. T =T +Pdiss*Rth J L Specification Parameter Unit Condition Min. Typ. Max. V =5.0V, V =5.0V, I =275mA 869MHz to 894MHz CC BIAS CQ Frequency 869 880 894 MHz Input Power (P ) 18 dBm Max recommended, V <6.0V IN CC Gain (S21) 17 dB OIP3 49 dBm 15dBm/tone, tone spacing=1MHz P1dB 29 dBm Efficiency at P3dB 58 % At P3dB, EVB tuned for linear operation Input Return Loss (S11) 16 dB Output Return Loss (S22) 18 dB Noise Figure 3.9 dB WCDMA Ch Power at -65dBc ACPR 17 dBm 3GPP 3.5, Test Model 1, 64 DPCH WCDMA Ch Power at -55dBc ACPR 19.3 dBm 3GPP 3.5, Test Model 1, 64 DPCH V =5.0V, V =5.0V, I =275mA UMTS2100 CC BIAS CQ Frequency 2110 2140 2170 MHz Input Power (P ) 20 dBm Max recommended, V <6.0V IN CC Gain (S21) 12.4 dB OIP3 47 dBm 15dBm/tone, tone spacing=1MHz P1dB 29 dBm Efficiency at P3dB 50 % At P3dB, EVB tuned for linear operation Input Return Loss (S11) 17 dB Output Return Loss (S22) 15 dB Noise Figure 3.1 dB WCDMA Ch Power at -65dBc ACPR 16.5 dBm 3GPP 3.5, Test Model 1, 64 DPCH WCDMA Ch Power at -55dBc ACPR 19 dBm 3GPP 3.5, Test Model 1, 64 DPCH Power Supply Operating Current (Quiescent) 230 275 380 mA At V =5.0V CC Operating Voltage (V ) 5.0 6.0 V Max recommended collector voltage CC Thermal Resistance (R ) 38 C/W At quiescent current, no RF TH Power Down Current 20 uA At V =0V REF 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 11 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS130130