AG303-86 InGaP HBT Gain Block Product Features Product Description Functional Diagram GND The AG303-86 is a general-purpose buffer amplifier that DC 6000 MHz 4 offers high dynamic range in a low-cost surface-mount 20.5 dB Gain 900 MHz package. At 900 MHz, the AG303-86 typically provides +14 dBm P1dB 900 MHz 20.5 dB gain, +26 dBm OIP3, and +14 dBm P1dB. The device combines dependable performance with consistent 1 3 +26 dBm OIP3 900 MHz RF In RF Out quality to maintain MTTF values exceeding 1000 years at Single Voltage Supply mounting temperatures of +85 C and is housed in a lead- Internally matched to 50 free/RoHS-compliant SOT-86 (micro-X) industry-standard 2 SMT package. Robust 1000V ESD, Class 1C GND Lead-free/RoHS-compliant SOT- The AG303-86 consists of a Darlington-pair amplifier 86 package Function Pin No. using the high reliability InGaP/GaAs HBT process Input 1 technology and only requires DC-blocking capacitors, a Output/Bias 3 bias resistor, and an inductive RF choke for operation. Ground 2, 4 Applications The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies Mobile Infrastructure such as GPRS, GSM, CDMA, and W-CDMA. In addition, CATV / FTTX the AG303-86 will work for other various applications WLAN / ISM within the DC to 6 GHz frequency range such as CATV and WiMAX. RFID WiMAX / WiBro (1) (1) Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz DC 6000 Frequency MHz 500 900 1900 2140 Test Frequency MHz 900 S21 dB 21.1 20.4 18.1 17.5 Gain dB 20.4 S11 dB -21 -22 -26 -25 Input Return Loss dB 22 S22 dB -22 -20 -16 -16 Output Return Loss dB 20 Output P1dB dBm +14.0 +14.0 +12.7 +12.4 Output P1dB dBm +14 Output IP3 dBm +26.4 +26.1 +24.8 +24.4 (2) Output IP3 dBm +26.1 Noise Figure dB 2.9 3.0 3.2 3.2 Output IP2 dBm +34 Noise Figure dB 3 Test Frequency MHz 1900 Gain dB 16.9 18.1 18.9 Output P1dB dBm +12.7 (2) Output IP3 dBm +24.8 Device Voltage V 4.23 Device Current mA 35 1. Test conditions: T = 25 C, Supply Voltage = +5 V, R = 22.1 , 50 System. bias 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Ordering Information Storage Temperature -55 to +125 C DC Voltage +5 V Part No. Description RF Input Power (continuous) +10 dBm InGaP HBT Gain Block AG303-86G Thermal Resistance, Rth 335 C/W (lead-free/RoHS-compliant SOT-86 Package) Junction Temperature AG303-86PCB 700 2400 MHz Fully Assembled Eval. Board +177 C Standard tape / reel size = 3000 pieces on a 13 reel Operation of this device above any of these parameters may cause permanent damage. TriQuint Semiconductor, Inc Phone 1-800-951-4401 FAX: 408-577-6633 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 1 of 5 March 2020 AG303-86 InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +5 V, R = 22.1 , I = 35 mA bias cc Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S21 dB 21.4 21.1 20.4 18.1 17.5 16.9 14.9 11.4 S11 dB -25 -21 -22 -26 -25 -25 -25 -25 S22 dB -19 -22 -20 -16 -16 -15 -15 -14 Output P1dB dBm +14.2 +14.0 +14.0 +12.7 +12.4 +12.1 +9.3 Output IP3 dBm +26.5 +26.4 +26.1 +24.8 +24.4 +23.9 Noise Figure dB 2.9 2.9 3.0 3.2 3.2 3.2 1. Test conditions: T = 25 C, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 , Icc = 35 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency Return Loss I-V Curve 24 0 60 22 50 -10 Optimal operating point 20 40 18 -20 30 20 16 -30 10 14 S11 S22 -40 C +25 C +85 C 0 -40 12 3.0 3.5 4.0 4.5 0 1 2 3 4 5 6 0 1 2 3 4 Device Voltage (V) Frequency (GHz) Frequency (GHz) Noise Figure vs. Frequency Output IP3 vs. Frequency Output IP2 vs. Frequency 30 40 5 4 25 35 3 20 30 2 15 25 1 -40 C +25 C +85 C -40c +25c +85c -40 C +25 C +85 C 0 10 20 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 Frequency (GHz) Frequency (MHz) Frequency (GHz) P1dB vs. Frequency Output Power / Gain vs. Input Power Output Power / Gain vs. Input Power frequency = 900 MHz frequency = 2000 MHz 20 22 20 18 16 20 16 16 12 15 Gain Gain 18 12 14 8 10 16 8 12 4 5 14 4 10 0 -40 C +25 C +85 C Output Power Output Power 0 12 0 8 -4 0 0.5 1 1.5 2 2.5 3 3.5 4 -20 -16 -12 -8 -4 0 4 -20 -16 -12 -8 -4 0 4 Frequency (GHz) Input Power (dBm) Input Power (dBm) TriQuint Semiconductor, Inc Phone 1-800-951-4401 FAX: 408-577-6633 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 2 of 5 March 2020 Gain (dB) P1dB (dBm) OIP3 (dBm) Gain (dB) OIP2 (dBm) S11, S22 (dB) Output Power (dBm) Gain (dB) NF (dB) Device Current (mA) Output Power (dBm)