AG302-63 InGaP HBT Gain Block Product Features Product Description Functional Diagram The AG302-63 is a general-purpose buffer amplifier that DC 6000 MHz GND 1 6 RF OUT offers high dynamic range in a low-cost surface-mount 15.5 dB Gain 900 MHz package. At 900 MHz, the AG302-63 typically provides +13.5 dBm P1dB 900 MHz 15.5 dB gain, +26.5 dBm OIP3, and +13.5 dBm P1dB. The GND 2 5 GND device combines dependable performance with consistent +26.5 dBm OIP3 900 MHz quality to maintain MTTF values exceeding 1000 years at RF IN 3 4 GND Single Voltage Supply mounting temperatures of +85 C and is housed in a lead- Internally matched to 50 free/green/RoHS-compliant SOT-363 industry standard Function Pin No. SMT package. Robust 1000V ESD, Class 1C Input 3 Lead-free/green/RoHS-compliant Output/Bias 6 The AG302-63 consists of a Darlington-pair amplifier Ground 1, 2, 4, 5 SOT-363 package using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. Applications The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies Mobile Infrastructure such as GPRS, GSM, CDMA, and W-CDMA. In addition, CATV / FTTX the AG302-63 will work for other various applications within the DC to 6 GHz frequency range such as CATV WLAN / ISM and WiMAX. RFID WiMAX / WiBro (1) Operation of this device above any of these parameters may cause permanent damage. Specifications (1) Typical Performance Parameter Units Min Typ Max Operational Bandwidth MHz DC 6000 Parameter Units Typical o Operational Temperature C -40 25 +85 Frequency MHz 500 900 1900 2140 Test Frequency MHz 900 S21 dB 15.9 15.6 14.5 14.2 Gain dB 15.6 S11 dB -18 -18 -18 -18 Input Return Loss dB 18 S22 dB -20 -18 -18 -15 Output Return Loss dB 18 Output P1dB dBm +13.2 +13.4 +12.2 +11.7 Output P1dB dBm +13.4 Output IP3 dBm +26.6 +26.4 +24.8 +24.3 (2) Output IP3 dBm +26.4 Noise Figure dB 3.3 3.4 3.6 3.6 Output IP2 dBm +37 Noise Figure dB 3.4 Test Frequency MHz 1900 Gain dB 13.5 14.5 15.5 Output P1dB dBm +12.2 (2) Output IP3 dBm +24.8 Device Voltage V 4.23 Device Current mA 35 1. Test conditions: . T = 25 C, Supply Voltage = +5 V, Rbias = 22.1 , 50 System. 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Ordering Information Parameter Rating Storage Temperature -55 to +125 C Part No. Description DC Voltage +4.5 V InGaP HBT Gain Block AG302-63G (lead-free/green/RoHS-compliant SOT-363 Package) RF Input Power (continuous) +10 dBm AG302-63PCB 700 2400 MHz Fully Assembled Eval. Board Thermal Resistance, Rth 325 C/W 6 For 10 hours MTTF Standard tape / reel size = 3000 pieces on a 7 reel Junction Temperature +177 C Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 1 of 5 August 2009 AG302-63 InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +5 V, R = 22.1 , I = 35 mA bias cc Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S21 dB 16.0 15.9 15.6 14.5 14.2 13.9 12.5 9.2 S11 dB -18 -18 -18 -18 -18 -18 -15 -11 S22 dB -20 -20 -18 -18 -15 -15 -14 -8 Output P1dB dBm +13.5 +13.2 +13.4 +12.2 +11.7 +11.6 +9.5 Output IP3 dBm +26.6 +26.6 +26.4 +24.8 +24.3 +23.9 Noise Figure dB 3.3 3.3 3.4 3.6 3.6 3.7 1. Test conditions: T = 25 C, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 , Icc = 35 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency Return Loss I-V Curve 16 0 60 50 14 -10 Optimal operating point 40 12 -20 30 10 20 -30 8 10 S11 S22 -40 C +25 C +85 C 0 -40 6 3.0 3.5 4.0 4.5 0 1 2 3 4 5 6 0 1 2 3 4 Device Voltage (V) Frequency (GHz) Frequency (GHz) Output IP3 vs. Frequency Output IP2 vs. Frequency Noise Figure vs. Frequency 30 40 5 4 25 35 3 20 30 2 15 25 1 -40 C +25 C +85 C -40c +25c +85c -40 C +25 C +85 C 0 10 20 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 Frequency (GHz) Frequency (GHz) Frequency (MHz) P1dB vs. Frequency Output Power / Gain vs. Input Power Output Power / Gain vs. Input Power frequency = 900 MHz frequency = 2000 MHz 20 16 16 14 16 14 12 12 12 15 Gain Gain 12 8 10 8 10 10 4 8 4 5 8 0 6 0 -40 C +25 C +85 C Output Power Output Power 0 6 -4 4 -4 0 0.5 1 1.5 2 2.5 3 3.5 4 -20 -16 -12 -8 -4 0 4 -20 -16 -12 -8 -4 0 4 Frequency (GHz) Input Power (dBm) Input Power (dBm) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 2 of 5 August 2009 Gain (dB) P1dB (dBm) OIP3 (dBm) Gain (dB) OIP2 (dBm) S11, S22 (dB) Output Power (dBm) Gain (dB) NF (dB) Device Current (mA) Output Power (dBm)