SBA4086Z SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features RFMDs SBA4086Z is a high performance InGaP/GaAs Heterojunction IP3=33.5dBm at 1950MHz Bipolar Transistor MMIC Amplifier. A Darlington configuration designed P =12.3dBm at -45dBc OUT with InGaP process technology provides broadband performance up to ACP IS-95 1950MHz 5GHz with excellent thermal performance. The heterojunction increases Robust 1000V ESD, Class 1C breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppres- Operates From Single Supply sion of intermodulation products. Only a single positive supply voltage, DC- Patented Thermal Design blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Applications Matching Applied GaAs HBT Gain and Return Loss vs Frequency PA Driver Amplifier GaAs MESFET 20 Cellular, PCS, GSM, UMTS 15 InGaP HBT 10 S21 SiGe BiCMOS IF Amplifier 5 Si BiCMOS 0 Wireless Data, Satellite SiGe HBT -5 Terminals s22 -10 GaAs pHEMT -15 Si CMOS -20 Si BJT -25 -30 GaN HEMT s11 -35 InP HBT -40 01 23 45 6 RF MEMS Frequency (GHz) LDMOS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 13.3 14.8 16.3 dB 850MHz 12.7 14.2 15.7 dB 1950MHz Output Power at 1dB Compression 19.1 dBm 850MHz 17.5 19.0 dBm 1950MHz Output Third Order Intercept Point 36.5 dBm 850MHz 31.5 33.5 dBm 1950MHz Output Power 12.3 dBm 1950MHz, -45dBc ACP IS-95 9 Forward Channels Bandwidth 5000 MHz Return Loss>10dB Input Return Loss 14.0 21.0 dB 1950MHz Output Return Loss 14.0 20.5 dB 1950MHz Noise Figure 4.8 5.8 dB 1950MHz Device Operating Voltage 4.6 5.0 5.4 V Device Operating Current 72 80 88 mA Thermal Resistance (junction to lead) 102 C/W Test Conditions: V =8V, I =80mA Typ., OIP Tone Spacing=1MHz, P per tone=0dBm, R =39 , T =25C, Z =Z =50 S D 3 OUT BIAS L S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110708 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 6 dBSBA4086Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Device Current (I)130 mA cause permanent damage to the device. Extended application of Absolute Maximum D Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Device Voltage (V)6 V D tions is not implied. RF Input Power +17 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Junction Temp (T)+150 C J infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Operating Temp Range (T ) -40 to +85 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- L cation circuitry and specifications at any time without prior notice. Storage Temp +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric Operating Dissipated Power 0.65 W materials and red phosphorus as a flame retardant, and <2% antimony in solder. Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD Typical Performance at Key Operating Frequencies Parameter Unit 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz Small Signal Gain dB 15.2 15.0 14.8 14.2 12.4 12.1 Output Third Order Intercept dBm 37.1 36.3 36.5 33.5 32.7 29.7 Point Output Power at 1dB dBm 19.0 19.1 19.1 19.0 18.3 16.4 Compression Input Return Loss dB 36 28 25 21 19.7 17 Output Return Loss dB 21 21 21.0 20.5 19.6 20.2 Reverse Isolation dB 181818 1819 20 Noise Figure dB 4.7 4.7 4.6 4.8 4.9 5.0 Test Conditions: V =8V, I =80mA Typ., OIP Tone Spacing=1MHz, P per tone=0dBm, R =39 , T =25C, Z =Z =50 S D 3 OUT BIAS L S L NF vs Frequency P1dB vs Frequency 21 7.00 6.50 19 6.00 5.50 5.00 17 4.50 4.00 15 3.50 +25c 3.00 -40c +25c 13 2.50 -40c +85c 2.00 +85c 1.50 11 1.00 00.5 11.5 22.5 33.5 00.5 11.522.5 33.5 Frequency (GHz) Frequency (GHz) IP3 vs Frequency 40 38 36 34 32 30 +25c 28 -40c 26 +85c 24 22 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 6 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110708 dB dBm dBm