SBB-3082S SBB-3082S InGaP HBT Active Bias Gain Block 50MHz to 6000MHz Package: Hermetic, 2-pin, 5.8mm x 2.8mm RFMDs SBB-3082S is a high-performance InGaP HBT MMIC amplifier utilizing Darlington configuration with an active bias Features network in a hermetic package. The active bias network Single Fixed 5V Supply provides stable current over temperature and Beta process Patented Self Bias Circuit and Thermal Design variations. The SBB-3082S is designed for high linearity gain Hermetic Package for High- block military and industrial applications requiring excellent Reliability Applications gain flatness, small size, minimal external components and OIP3 = 29dBm at 1.15GHz hermetic packaging. RFMD can provide various levels of PIdB = 15.1 at 1.15GHz device screening for military or high-reliability space applications. Applications Military and Space Communications Industrial Applications Aerospace and Defense Ordering Information SBB-3082S Hermetic Package RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131119 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 1 of 5 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. SBB-3082S Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Device Current (I ) 100 mA D Device Voltage (V ) 6 V D RFMD Green: RoHS compliant per EU RF Input Power +20 dBm Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of Junction Temperature (T ) +150 C J antimony trioxide in polymeric materials Operating Temperature Range -40 to +85 C and red phosphorus as a flame retardant, and <2% antimony solder. Storage Temperature Range -55 to +150 C Exceeding any one or a combination of the Absolute Moisture Sensitivity Level Hermetic Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute ESD Rating - Human Body Model (HBM) Class 1C Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max Typical Performance with Bias Tees, V = 5V with R = 20 , I = D DC D General Performance 42mA, OIP3 Pout = 0dBm/tone, T = 25C Small Signal Gain 15 16.4 21 dB Frequency Range 1.0GHz to 1.3GHz 15.4 dB 4GHz Output Power at 1dB Compression 14.5 15.1 18.5 dBm 1.150GHz OIP3 27.5 29.0 dBm F = 1150MHz, F = 1151MHz 1 2 Input Return Loss 17 21 dB 1.0GHz to 1.3GHz 14 dB 4GHz Output Return Loss 17 25.0 dB 1.0GHz to 1.3GHz 13 dB 4GHz Reverse Isolation 17 19 dB 1.150GHz Noise Figure 4.0 5.0 dB 1.150GHz Operating Voltage 4.2 V R = 20, V = 5.0 V DC S Operating Current 34 42 50 mA R = 20, V = 5.0 V DC S Thermal Resistance 99 C/W Junction to case RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131119 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 5