SBW-5089(Z) DCto8GHz Cascadable InGaP/GaAs HBT MMIC Amplifier SBW-5089(Z) DCto8GHz CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC Amplifier. A Dar- Available in RoHS Compliant and Pb-Free (Z Part Number) lington circuit fabricated with InGaP process technology provides broadband RF per- formance up to 8GHz and excellent thermal performance. The heterojunction 50 Cascadable Gain Block increases breakdown voltage and minimizes leakage current between junctions. Wideband Flat Gain to 3GHz: Cancellation of emitter junction non-linearities results in high suppression of inter- +/-1.4dB modulation products. Operation requires only a single positive voltage supply, 2 DC- blocking capacitors, a bias resistor and an RF choke. P = 13.4 at 6GHz 1dB Gain Return Loss versus Frequency, I =80mA (Typ), D Input / Output VSWR Tuned Application Circut Optimum Technology <2:3to8GHz Matching Applied GaAs HBT Patented Thermal Design 25 0 GaAs MESFET Single Voltage Supply Operation InGaP HBT 20 -5 Gain SiGe BiCMOS Applications Si BiCMOS 15 -10 Wideband Instrumentation ORL SiGe HBT GaAs pHEMT Fiber Optic Driver 10 -15 Si CMOS IRL OC-48 Si BJT 5 -20 Basestation GaN HEMT InP HBT SAT COM 0 -25 RF MEMS 0123 4567 8 LDMOS Frequency (GHz) Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain, PC board and 19.3 20.3 21.3 dB 850MHz connector losses de-embedded 16.7 17.5 19.0 dB 3000MHz 17.2 dB 4200MHz 14. 2 15 .0 16.5 dB 6000MHz Output Power at 1dB Compression 20.1 dBm 850MHz 18.419.4 dBm1950MHz Output Third Order Intercept Point 35.5 dBm 850MHz 32.0 34.0 dBm 1950MHz Output Power 13.0 dBm 1950MHz, -45dBc ACP IS-95 9 Forward Chan- nels (P ) OUT Determined by Return Loss 6000 MHz >10dB Noise Figure 3.9 4.4 dB 1950MHz Worst case Input Return Loss 7.0 10.0 dB DCto6000MHz Worst case Output Return Loss 8.0 10.0 dB DCto6000MHz Device Operating Voltage 4.5 4.9 5.3 V Device Operating Current 72.0 80.0 88.0 mA Thermal Resistance 70 C/W junction to backside Test Conditions: V =8V I =80mA Typ. OIP Tone Spacing=1MHz T =25C S D 3 L Bias Resistance=39 P per tone=0dBm Z =Z =50 OUT S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS150 923 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 7 Gain (dB) Return Loss (dB) SBW-5089(Z) Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Max Device Current (l)130 mA D cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Max Device Voltage (V)6 V D mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Max RF Input Power 17 dBm RoHS status based on EUDirective2002/95/EC (at time of this document revision). Max Dissipated Power 0.65 W The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Max Junction Temperature (T)150 C J infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Operating Temperature Range (T ) -40 to + 85 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- L cation circuitry and specifications at any time without prior notice. Max Storage Temperature 150 C ESD Rating - Human Body Model 1C Class Moisture Sensitivity Level MSL 2 Typical Performance at Key Operating Frequencies Parameter Units 500MHz 850MHz 1950MHz 2400MHz 3500MHz 5800MHz Small Signal Gain dB 20.5 20.3 19.1 18.7 17.3 15.1 Output Third Order Intercept Point dBm 36.5 35.5 34.0 33.0 30.5 25.5 Output Power at 1dB Compression dBm 20.2 20.1 19.4 19.4 17.5 13.4 Input Return Loss dB 26 26 19 15 12 12.5 Output Return Loss dB 19 17.5 12 11 10.5 10.9 Reverse Isolation dB 2223 2323 2323 Noise Figure dB 3.6 3.6 3.9 3.9 4.1 4.3 Test Conditions: V =8V, I =80mA Typ, OIP Tone Spacing=1MHz, P per tone=0dBm. T =25C, Bias Resistance=39 , Z =Z =50 . S D 3 OUT L S L OIP3 vs. Frequency P1dB vs. Frequency 26 39 36 23 33 20 30 17 27 24 14 21 11 -40C -40C 18 +25C +25C 8 15 +85C +85C 5 12 01 23 4 5 6 01 2 34 56 Frequency(GHz) Frequency (GHz) Noise Figure vs. Frequency 6 5 4 3 2 -40C 1 +25C +85C 0 01 2 34 56 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 7 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS150 923 P1dB (dBm) NF (dB) OIP3 (dBm)