SDA-1000 SDA-1000 GaAs Distributed Amplifier Package: Die, 3.1mm x 1.45mm x 0.102mm RFMDs S DA -1000 is a directly coupled (DC) GaAs Features microwave monolithic integrated circuit (MMIC) distributed DC to 20GHz Operation driver amplifier die designed to support a wide array of high +26dBm P 3dB frequency commercial, military, and space applications. They Gain = 14dB Typical are ideal for wideband amplifier gain blocks, broadband test Noise Figure = 4dB equipment (ATE), military, and aerospace applications. Output Voltage to 8V PP 300mA Total Current Applications Military Aerospace Broadband ATE Instrumentation Functional Block Diagram Ordering Information SDA1000 GaAs Distributed Amplifier, GelPak, 10 pieces or more SDA1000SB GaAs Distributed Amplifier, GelPak, 2 pieces RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140127 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 1 of 7 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. SDA-1000 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Drain Bias Voltage (V ) +9.0 V DD DC Gate Bias Voltage (VTI) -2 to 0 V DC RFMD Green: RoHS compliant per EU Gate Bias Voltage (V ) (V - 8.0) V to V V G2 DD DC DD Directive 2011/65/EU, halogen free per dBm IEC 61249-2-21, <1000ppm each of RF Input Power (V = +8.0V ) 20 DD DC antimony trioxide in polymeric materials Operating Channel Temperature (T ) +175 C J and red phosphorus as a flame retardant, and <2% antimony solder. Continuous Power Dissipation (T = +85C) 3.5 W Exceeding any one or a combination of the Absolute Thermal Resistance (Pad to Die Bottom) 25 C/W Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Storage Temperature -40 to +150 C Maximum Rating conditions to the device may reduce Operating Temperature -40 to +85 C device reliability. Specified typical performance or functional operation of the device under Absolute ESD JESD22-A114 Human Body Model (HBM) Class 0 (All Pads) Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max TA = +25C, VDD = +8VDC, VG2 at = +3.5VDC, General Performance I = 300mA DD Operating Frequency 0 20 GHz Gain 13.8 14.5 dB 10GHz Maximum Output Voltage 8 V P-P IP3 at 10GHz 36 dBm P 0dBm OUT P1dB at 10GHz 25 dBm P3dB at 10GHz 26.5 dBm Noise Figure at Mid-Band 4 dB Input Return Loss 13 dB Output Return Loss 15 Supply Current 300 mA Supply Voltage 8 V DC *Adjust VTI between -1.5V to +0.2V to achieve I = 300mA typical., V = 3.5V typ. DC DC DD G2 DC RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140127 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 7